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參數(shù)資料
| 型號： | SPN8822ATS8TG |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 常見的漏雙N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 237K |
| 代理商： | SPN8822ATS8TG |
Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless othe
℃
2007/06/20
Ver.1
Page 3
SPN8822A
Common-Drain Dual N-Channel
rwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
I
DSS
V
DS
=20V,V
GS
=0V
T
J
=55
℃
20
0.6
V
±100
1
nA
Zero Gate Voltage Drain Current
10
uA
On-State Drain Current
I
D(on)
V
DS
≥
5
V,V
GS
=4.5V
6
A
V
GS
=4.5V,I
D
=5.8A
V
GS
=2.5V,I
D
=5.0A
V
DS
=15V,I
D
=5.0A
I
S
=1.7A,V
GS
=0V
0.024
0.032
30
0.8
0.030
0.042
1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
gfs
V
SD
S
V
Dynamic
Total Gate Charge
Q
g
2
Gate-Source Charge
Q
gs
2.5
Gate-Drain Charge
Q
gd
V
DS
=10V, V
GS
=4.5V,
I
D
=6.0A
2.1
nC
Input Capacitance
C
iss
575
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
84
22
V
DS
=8V,V
GS
=0V
f=1MHz
pF
t
d(on)
10
14
Turn-On Time
t
r
16
20
t
d(off)
35
40
Turn-Off Time
t
f
V
DD
=10V,R
L
=6
I
D
≡
1.0A,V
GEN
=4.5V
R
G
=6
3
10
ns
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