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參數(shù)資料
| 型號： | SPN6561 |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙N溝道增強型MOS管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 210K |
| 代理商： | SPN6561 |
PIN DESCRIPTION
2006/06/05
Ver.1
Page 2
SPN6561
Dual N-Channel Enhancement Mode MOSFET
Pin
1
2
3
4
5
6
Symbol
G1
S2
G2
D2
S1
D1
Description
Gate 1
Source 2
Gate 2
Drain 2
Source 1
Drain1
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN6561S26RG
SOT-23-6L
61YW
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPN6561S26RG : Tape Reel ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
Unless otherwise noted)
℃
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
30
V
Gate –Source Voltage
V
GSS
±20
V
T
A
=25
℃
2.8
Continuous Drain Current(T
J
=150
)
℃
T
A
=70
℃
I
D
2.3
A
Pulsed Drain Current
I
DM
10
A
Continuous Source Current(Diode Conduction)
I
S
1.25
A
T
A
=25
℃
1.15
Power Dissipation
T
A
=70
℃
P
D
0.75
W
Operating Junction Temperature
T
J
-55/150
℃
Storage Temperature Range
T
STG
-55/150
50
90
℃
T
≤
10sec
Steady State
Thermal Resistance-Junction to Ambient
R
θ
JA
℃
/W
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PDF描述 |
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| SPN6561S26RG | Dual N-Channel Enhancement Mode MOSFET |
| SPN6562 | Dual N-Channel Enhancement Mode MOSFET |
| SPN6562S26RG | Dual N-Channel Enhancement Mode MOSFET |
| SPN7002D | Dual N-Channel Enhancement Mode MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPN6561_09 | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| SPN6561S26RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| SPN6561S26RGB | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| SPN6562 | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| SPN6562S26RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
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