參數(shù)資料
型號(hào): SPN6435S36RG
英文描述: Dual N-Channel Enhancement Mode MOSFET
中文描述: 雙N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 223K
代理商: SPN6435S36RG
PIN DESCRIPTION
2007/04/25
Ver.1
Page 2
SPN6435
Dual N-Channel Enhancement Mode MOSFET
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN6435S36RG
SOT-363
435YW
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
SPN6435S36RG : Tape Reel ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
Unless otherwise
noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
40
V
Gate –Source Voltage - Continuous
V
GSS
±20
V
Gate –Source Voltage - Non Repetitive ( t
p
< 50
μ
s)
V
GSS
±40
V
Continuous Drain Current(T
J
=150
)
T
A
=25
I
D
0.3
A
Pulsed Drain Current (
)
I
DM
1.0
A
Continuous Source Current(Diode Conduction)
I
S
0.3
A
Power Dissipation
T
A
=25
P
D
0.35
W
Operating Junction Temperature
T
J
-55 ~ 150
Storage Temperature Range
T
STG
-55 ~ 150
Thermal Resistance-Junction to Ambient
R
θ
JA
375
/W
(
) Pulse width limited by safe operating area
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