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參數(shù)資料
| 型號： | SPN04N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 97K |
| 代理商： | SPN04N60S5 |
2002-07-29
Page 7
SPN04N60C2
Final data
9 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 10 μs
0
2
4
6
8
10
12
14
16
V
20
V
GS
0
2
4
6
8
10
12
A
16
I
D
25 °C
150 °C
10 Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 200 μA
-60
-20
20
60
100
°C
180
T
j
0
1
2
3
4
5
V
7
V
G
typ.
max.
min.
11 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 0.8 A pulsed
0
4
8
12
16
20
nC
28
Q
Gate
0
2
4
6
8
10
12
V
16
SPN04N60C2
V
G
0,8
V
DS max
DS max
V
0,2
12 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
1
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-2
10
-1
10
0
10
A
SPN04N60C2
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
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