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| 型號(hào)： | SPC6601 |
| 英文描述： | N & P Pair Enhancement Mode MOSFET |
| 中文描述： | ? |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 273K |
| 代理商： | SPC6601 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2006/03/20
Ver.2
Page 3
SPC6601
N & P Pair Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V
GS
=0V,I
D
= 250uA
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
= 24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V T
J
=55
℃
V
DS
=-24V,V
GS
=0V T
J
=55
℃
V
DS
≥
5V,V
GS
= 10V
I
D(on)
V
DS
≤
-5V,V
GS
=-10V
V
GS
= 10V,I
D
= 2.8A
V
GS
=-10V,I
D
=-2.8A
V
GS
= 4.5V,I
D
= 2.3A
V
GS
=-4.5V,I
D
=-2.5A
V
GS
= 2.5V,I
D
= 1.5A
V
GS
=-2.5V,I
D
=-1.5A
V
DS
=4.5V,I
D
=2.8A
gfs
V
DS
=-10V,I
D
=-2.8A
I
S
= 1.25A,V
GS
=0V
V
SD
I
S
=-1.2A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
0.8
-0.4
6
-6
1.6
-1.0
±100
±100
1
-1
10
-10
Gate Threshold Voltage
V
Gate Leakage Current
nA
Zero Gate Voltage Drain
Current
I
DSS
uA
On-State Drain Current
A
0.048 0.068
0.077 0.105
0.054 0.078
0.092 0.120
0.079 0.108
0.118 0.150
4.6
4
0.8
-0.8
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
S
1.2
-1.2
Diode Forward Voltage
V
Dynamic
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.2
5.8
0.6
0.8
1.5
1.5
2.5
6
2.5
3.9
20
40
4
15
6
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
N-Channel
V
DS
=15 ,V
GS
=4.5V , I
D
≡
2.0A
P-Channel
V
DS
=-15V ,V
GS
=-4.5V , I
D
≡
-2.0A
nC
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
N-Channel
V
DD
=15 , R
L
=10
V
GEN
=10V , R
G
=3
P-Channel
V
DD
=-15V , R
L
=15
V
GEN
=-10V , R
G
=3
nS
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