參數(shù)資料
型號(hào): SPC5566MVR144
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 13/54頁(yè)
文件大?。?/td> 0K
描述: MCU 3MB FLASH 144MHZ 416-PBGA
標(biāo)準(zhǔn)包裝: 200
系列: MPC55xx Qorivva
核心處理器: e200z6
芯體尺寸: 32-位
速度: 144MHz
連通性: CAN,EBI/EMI,以太網(wǎng),SCI,SPI
外圍設(shè)備: DMA,POR,PWM,WDT
輸入/輸出數(shù): 256
程序存儲(chǔ)器容量: 3MB(3M x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 128K x 8
電壓 - 電源 (Vcc/Vdd): 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 40x12b
振蕩器型: 外部
工作溫度: -40°C ~ 125°C
封裝/外殼: 416-BBGA
包裝: 托盤
MPC5510 Microcontroller Family Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
20
2
Electrical Characteristics
This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing
specifications for the MCU.
2.1
Maximum Ratings
Table 3. Absolute Maximum Ratings1
1 Functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only,
and functional operation at the maxima is not guaranteed. Stress beyond the listed maxima may affect device reliability or
cause permanent damage to the device.
Num
Characteristic
Symbol
Min
Max2
2 Absolute maximum voltages are currently maximum burn–in voltages. Absolute maximum specifications for device stress have
not yet been determined.
Unit
1
5.0V Voltage Regulator Reference Voltage
VDDR
– 0.3
6.5
V
2
5.0V Analog Supply Voltage (reference to VSSA)VDDA
– 0.3
6.5
V
3
5.0V Flash Program/Erase Voltage
VPP
– 0.3
6.5
V
4
3.3V – 5.0V External I/O Supply Voltage 3
3 All functional non-supply I/O pins are clamped to V
SS and VDDE.
VDDE1
4
VDDE2
VDDE3
4 V
DDE1, VDDE2, and VDDE3 are separate power segments and may be powered independently with no differential voltage
constraints between the power segments.
– 0.3
6.5
V
5
DC Input Voltage 5
5 AC signal over and undershoot of the input voltages of up to +/– 2.0 volts is permitted for a cumulative duration of 60 hours
over the complete lifetime of the device (injection current does not need to be limited for this duration).
VIN
–1.06
6 Internal structures will hold the input voltage above -1.0 volt if the injection current limit of 2mA is met.
6.57
7 Internal structures hold the input voltage below this maximum voltage on all pads powered by V
DDE supplies, if the maximum
injection current specification is met (2 mA for all pins) and VDDE is within Operating Voltage specifications.
V
6VREF Differential Voltage
VRH – VRL
– 0.3
5.5
V
7VRH to VDDA Differential Voltage
VRH – VDDA
– 5.5
5.5
V
8VRL to VSSA Differential Voltage
VRL – VSSA
– 0.3
0.3
V
9VDDR to VDDA Differential Voltage
VDDR – VDDA
– VDDA
0.3
V
10
Maximum DC Digital Input Current 8 (per pin, applies to all
digital MH, SH, and IH pins)
8 Total injection current for all pins (including both digital and analog) must not exceed 25mA.
IMAXD
–2
2
mA
11
Maximum DC Analog Input Current 9 (per pin, applies to all
analog AE and A pins)
9 Total injection current for all analog input pins must not exceed 15mA.
IMAXA
–3
3
mA
12
Storage Temperature Range
TSTG
– 55.0
150.0
oC
13
Maximum Solder Temperature 10
10 Solder profile per CDF-AEC-Q100.
TSDR
260.0
oC
14
Moisture Sensitivity Level 11
11 Moisture sensitivity per JEDEC test method A112.
MSL
3
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