參數(shù)資料
型號(hào)： SPC5517SAMLU66
廠商： Freescale Semiconductor
文件頁數(shù)： 29/54頁
文件大?。?/td> 0K
描述： MCU POWERPC 1MB FLASH 176-LQFP
標(biāo)準(zhǔn)包裝： 40
系列： MPC55xx Qorivva
核心處理器： e200z1
芯體尺寸： 32-位
速度： 66MHz
連通性： CAN，EBI/EMI，I²C，SCI，SPI
外圍設(shè)備： DMA，POR，PWM，WDT
輸入/輸出數(shù)： 137
程序存儲(chǔ)器容量： 1.5MB（1.5M x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 4.5 V ~ 5.25 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 40x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 125°C
封裝/外殼： 176-LQFP
包裝： 托盤
Electrical Characteristics
MPC5510 Microcontroller Family Data Sheet, Rev. 3
Freescale Semiconductor
35
2.11
Flash Memory Electrical Characteristics
Table 16. Flash Program and Erase Specifications1
1 Typical program and erase times assume nominal supply values and operation at 25 oC.
Num
Characteristic
Symbol
Min
Typ
Initial
Max2
2 Initial factory condition:
< 100 program/erase cycles, nomial supply values and operation at 25 oC.
Max3
3 The maximum time is at worst case conditions after the specified number of program/erase cycles. This maximum value is
characterized but not guaranteed.
Unit
1
Double Word (64 bits) Program Time 4
4 This does not include software overhead.
Tdwprogram
—
10
—
500
μs
2
Page (128 bits) Program Time 4
Tpprogram
—
15
44
500
μs
3
16 Kbyte Block Pre-program and Erase Time
T16kpperase
—
325
525
5000
ms
4
64 Kbyte Block Pre-program and Erase Time
T64kpperase
—
525
675
5000
ms
5
128 Kbyte Block Pre-program and Erase Time
T128kpperase
—
675
1800
7500
ms
6
Minimum operating frequency for program and erase
operations
—25
—
MHz
7
Wait States Relative to System Frequency
PFCRPn[RWSC] = 0b000; PFCRPn[WWSC] = 0b01
PFCRPn[RWSC] = 0b001; PFCRPn[WWSC] = 0b01
PFCRPn[RWSC] = 0b010; PFCRPn[WWSC] = 0b01
Trwsc
—
25
50
80
MHz
8Recovery Time
Stop mode exit or STOP bit negated
Sleep mode exit (with CRP_RECPTR[FASTREC]=1) 5
5 If CRP_RECPTR[FASTREC]=0, then hardware will wait 2340 system clocks before exiting from Sleep mode to account for the
flash recovery time. The default system clock source after Sleep is the 16MIRC. A nominal frequency of 16MHz equates to a
hardware wait of 146
μs.
Trecover
—
20
120
μs
Table 17. Flash EEPROM Module Life (Full Temperature Range)
Num
Characteristic
Symbol
Min
Typical1
1 Typical endurance is evaluated at 25C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of Typical Endurance, please refer to Engineering Bulletin EB619 “Typical Endurance
for Nonvolatile Memory.”
Unit
1
Number of Program/Erase cycles per block over the operating
temperature range (TJ)
16 Kbyte and 64 Kbyte blocks
128 Kbyte blocks
P/E
100,000
1000
—
100,000
cycles
2
Data retention
Blocks with 0 – 1,000 P/E cycles
Blocks with 1,001 – 100,000 P/E cycles
Retention
20
5
—years
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