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參數(shù)資料
| 型號(hào)： | SPC4539S8TG |
| 英文描述： | N & P Pair Enhancement Mode MOSFET |
| 中文描述： | ? |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 283K |
| 代理商： | SPC4539S8TG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2007/04/25
Ver.1
Page 3
SPC4539
N & P Pair Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V
GS
=0V,I
D
= 250uA
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±20V
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
= 24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V T
J
=55
℃
V
DS
=-24V,V
GS
=0V T
J
=55
℃
V
DS
≥
5V,V
GS
= 10V
I
D(on)
V
DS
≤
-5V,V
GS
=-10V
V
GS
= 10V,I
D
= 6.8A
V
GS
=-10V,I
D
=-5.7A
V
GS
= 4.5V,I
D
= 5.6A
V
GS
=-4.5V,I
D
=-4.4A
V
DS
= 15V,I
D
=-5.9A
gfs
V
DS
=-15V,I
D
=-5.0A
I
S
= 1.7A,V
GS
=0V
V
SD
I
S
=-1.7A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1.0
-1.0
30
-30
3.0
-3.0
±100
±100
1
-1
5
-5
Gate Threshold Voltage
V
Gate Leakage Current
nA
Zero Gate Voltage Drain
Current
I
DSS
uA
On-State Drain Current
A
0.026 0.034
0.045 0.060
0.036 0.046
0.060 0.080
15
9
0.8
-0.8
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
S
1.2
-1.2
Diode Forward Voltage
V
Dynamic
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
13
15
2.3
4
2
2
6
7
14
10
30
40
5
20
20
25
12
15
25
20
60
80
10
40
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
N-Channel
V
DS
= 15V,V
GS
= 10V , I
D
= 5.9A
P-Channel
V
DS
=-15V,V
GS
=-10V , I
D
= -5.0A
nC
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
N-Channel
V
DD
=15V,R
L
=15
I
D
≡
1.0A,V
GEN
=10V R
G
=6
P-Channel
V
DD
=-15V,R
L
=15
I
D
≡
-1.0A,V
GEN
=-10V R
G
=6
nS
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