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參數(shù)資料
| 型號(hào)： | SPB-G34S |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes (Power Surface Mount) 30V, 40V, 60V |
| 中文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | SPB-G34S |
SPB-64S
Tc —I
F(AV)
Derating
SPJ -63S
10
20
50
40
30
0 1
5
50
10
20ms
I
F
Parameter
Type No.
Absolute Maximum Ratings
V
RM
(V)
I
F (AV)
I
FSM
V
F
(V)
I
F
(A)
I
/
I
RP
(mA)
Rth (j-c)
I
(mA)
V
=
V
RM
max per element
I
(H)
(mA)
t
rr
(ns)
Tj
(
°
C)
Tstg
(
°
C)
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Remarks
Center-tap
Center-tap
1 Chip
1 Chip
Others
SPB-64S
6.0
40
30
60
3.0
5.0
50
60
100
60
0.55
0.7
0.6
3.0
3.5
5.0
0.75
50
50
50
100/100
0.45
3.0
30
(Tj
=
125
°
C)
—
—
–40 to +150
5.0
5.0
0.29
1.04
0.29
SPB-G34S
SPB-G54S
6.0
15.0
5.0
7.5
5.0
3.0
50
100/100
50
(Tj
=
150
°
C)
2.5
—
—
SPB-G56S
A
A
B
10
20
50
40
30
0 1
5
50
10
20ms
I
F
10
20
50
40
30
0 1
5
50
10
20ms
I
F
SPB-G34S
Tc —I
F(AV)
Derating
30
10
1
0.1
0.01
0.0010
0.2
0.4
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.001
0
10
30
50
60
20
40
SPJ -63S
6.0
MPE-24H
80
Case Temperature Tc
(
°
C)
70
90
100
110
120
130
0
1.0
2.0
3.0
4.0
5.0
6.0
V
R
=40V
100
Case Temperature Tc
(
°
C)
95
105
110
115
120
125
0
1.0
0.5
2.0
1.5
2.5
3.0
V
R
=40V
D.C.
D.C.
t/T=
t/T=
t/T=
Sinewave
t/T=
t/T=
t/T=
T
a
=
100oC
60oC
27oC
100oC
T
a
=
60oC
27oC
30
10
1
0.1
0.01
0.0010
0.2
0.4
0.6
0.8
1.0
1.2
T
a
=
100oC
60oC
28oC
100
10
1
0.1
0.01
0.005
0
10
30
50
60
20
40
100oC
T
a
=
60oC
28oC
6.5
±
0.4
5.4
±
0.4
2.3
±
0.4
5.4
4.1
4.9
1
±
0
5
±
0
2
±
0
0.8
±
0.1
0.8
1.5max
±
0.1
0.55
±
0.1
0.55
±
0.1
1.15
1
2
3
±
0.1
1
2.29
±
0.5
2.29
±
0.5
0 to 0.25
0
±
0
2.9
0
1
5
0
V
R
=V
RM,
Ta=100
°
C
max per element
86
1.2
1.27
10.2
0.86
0.76
2.54
2.54
4.44
1.3
2.59
0.4
3
1
8
1
1
1
1
Schottky Barrier Diodes
(Power Surface Mount)
30V, 40V, 60V
Half-Single Shot
max per
element
Fig.
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
Overcurrent Cycles
I
FMS
Rating
P
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Sinewave
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
Type No.
Polarity
Lot No.
1
3
2
(Common to backside of case)
N.C
1 Chip
Anode
Cathode
Anode
Center-tap
Anode
Cathode (Common)
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