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參數(shù)資料
| 型號(hào)： | SPA513-02 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 橋式整流 |
| 英文描述： | 1 A, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | ASPM,19 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 312K |
| 代理商： | SPA513-02 |
SPA513 Series
1 AMP, 15,000 to 20,000 VOLTS
HIGH VOLTAGE
RECTIFIER BRIDGE STACK
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPA513- __ __ __
└ Finish
__ = Standard Case
SAB = Sand Blasted Case
│
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Dash Number 3/
FEATURES:
Aerospace High Voltage Power Supply Applications
Low Mechanical Stress Design
Excellent Thermal Management- 2.5DC/W
TX, TXV, and Space Level Screening Available
Consult Factory For:
Higher Blocking Voltages
Faster Switching Voltages
Other Electrical Configurations
ASPM
ELECTRICAL CHARACTERISTICS, Each Bridge Leg, @ TA = 25°C (Unless Otherwise Specified)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Instantaneous Forward Voltage Drop
(IF = 1.0A, 300sec Pulse Minimum)
VF1
---
7.5
Volts
Reverse Leakage
(VR = 2,500V, 300sec Pulse Minimum)
TA = 25°C
TA = 100°C
IR1
IR2
---
1.0
50
Amps
Insulation Resistance (All Terminals to Base @ 15,000V)
RINSUL1
10
---
G
Reverse Recovery Time
(IF = 0.5A, IR = 1.0A, IRR = 0.25A)
trr
---
60
nsec
Notes: 1/ For ordering information, price, and availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ For each dash number, refer to VR(MODULE) rating, schematic, and outline.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse and DC Blocking Voltage
(Module)
SPA513-02
SPA513-03
SPA513-04
VR (MODULE)
3/
15 KV
17.5 KV
20 KV
Volts
Peak Repetitive Reverse and DC Blocking Voltage (Each Bridge)
VR
3,300
Volts
Average Rectified Forward Current
(Non-Repetitive, t = 8.3 msec Pulse)
IO
1
Amps
Peak Surge Current
(Non-Repetitive, t = 8.3 msec Pulse, TA = 25°C)
IFSM
25
Amps
Storage & Operating Temperature Range
TOP & TSTG
-65 to +150
°C
Thermal Resistance, Junction to Base
θJB
2.5
°C/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0012E
DOC
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