參數(shù)資料
型號： SPA20N65C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁數(shù)： 1/14頁
文件大?。?/td> 784K
代理商： SPA20N65C3
2003-0
8
-
15
Page 1
SPP20N65C3, SPA20N65C3
SPI20N65C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
V
DS
@
T
jmax
R
DS(on)
I
D
650
0.19
V
A
20.7
P-TO262-3-1
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
20N65C3
20N65C3
20N65C3
Type
SPP20N65C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4556
SPA20N65C3
P-TO220-3-31 Q67040-S4555
SPI20N65C3
P-TO262-3-1
Q67040-S4560
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
20.7
13.1
20.7
1)
13.1
1)
A
I
D puls
E
AS
62.1
62.1
A
I
D
=3.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=7A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
690
690
mJ
E
AR
1
1
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
7
7
A
±20
±
30
208
±20
±
30
34.5
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_I
-55...+150
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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SPA-2118 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT GAAS 850MHZ 8-SOIC
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