參數(shù)資料
型號(hào): SPA11N65C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁(yè)數(shù): 1/14頁(yè)
文件大?。?/td> 816K
代理商: SPA11N65C3
2003-0
8
-
15
Page 1
SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
V
DS
R
DS(on)
I
D
650
0.38
V
A
11
P-TO262-3-1
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
11N65C3
11N65C3
11N65C3
Type
SPP11N65C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4557
SPA11N65C3
P-TO220-3-31 Q67040-S4554
SPI11N65C3
P-TO262-3-1
Q67040-S4561
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
11
7
11
1)
7
1)
A
I
D puls
E
AS
33
33
A
I
D
=2.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=4A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
340
340
mJ
E
AR
0.6
0.6
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
4
4
A
±20
±
30
125
±20
±
30
33
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_I
-55...+150
°C
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