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參數(shù)資料
| 型號(hào)： | SPA-2118 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 850 MHz 1 Watt Power Amplifier with Active Bias |
| 中文描述： | 850兆赫1瓦功率放大器的有源偏置 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 214K |
| 代理商： | SPA-2118 |
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
1
Product Description
EDS-102012 Rev F
http://www.sirenza.com
SPA-2118
850 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
High Linearity Performance:
+20.7 dBm IS-95 CDMA Channel Power
at -55 dBc ACP
+47 dBm typ. OIP3
On-chip Active Bias Control
High Gain: 33 dB Typ.
Patented High Reliability GaAsHBT Technology
Surface-Mountable Plastic Package
Applications
IS-95 CDMA Systems
Multi-Carrier Applications
AMPS, ISM Applications
Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for multi-carrier and
digital applications.
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VC1
VBIAS
RFIN
VPC2
RFOUT/
VC2
Active
Bias
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