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參數(shù)資料
| 型號(hào)： | SP8714IGMPAS |
| 廠商： | Mitel Networks Corporation |
| 英文描述： | 2100MHz Very Low Current Multi-Modulus Divider |
| 中文描述： | 2100MHz非常低的電流多模數(shù)分頻器 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | SP8714IGMPAS |
2
SP8714
ELECTRICAL CHARACTERISTICS
Guaranteed over the following conditions (unless otherwise stated):
V
CC
=+2.7V to +5.25V (with respect to V
EE
), Output load (pin 4) = 10pF, T
amb
= -40
°
C to +85
°
C (note 2)
Characteristic
Units
Conditions
Supply current
(note 3)
6.8
8.5
mA
Power down input low
Supply current
(note 3)
8
50
μ
A
Power down input high
Power down high
V
CC
-0.5
V
CC
V
Power down low
0
V
CC
-2.0
V
Modulus control high
(note 4)
0.6V
CC
V
CC
V
Divide by 32 or 64
Modulus control low
(note 4)
0
0.4V
CC
V
Divide by 33 or 65
Ratio select high
(note 4, 9)
0.6V
CC
V
CC
V
Divide by 32 or 33
Ratio select low
(note 4, 9)
0
0.4V
CC
V
Divide by 64 or 65
Max. sinewave input frequency
2100
MHz
See Figure 5
Min. sinewave input frequency
200
MHz
See Figure 5
Min. RF input voltage
50
mV RMS RF input 200MHz to
2100MHz. See Figure 5
Max. RF input voltage
200
mV RMS RF input 200MHz to
2100MHz. See Figure 5
Output level (pin 4)
500
600
mV p-p
Modulus set-up time, t
s
(notes 5,6,8)
10
ns
RF input = 1GHz
Modulus hold time, t
h
(notes 6,8)
1
ns
RF input = 1GHz
Power down time, t
pd
(notes 7,8)
10
μ
s
See Figure 9
Power down recovery time, t
pu
(notes 7,8)
8
μ
s
See Figure 9
NOTES
2. All electrical testing is performed at +85
°
C.
3. Typical values are measured at +25
°
C and V
= +5V.
4. Modulus Control and Ratio Select are high impedance inputs which can be driven directly by standard CMOS outputs.
5. Modulus control is latched at the end of the previous cycle.
6. See Figure 4.
7. See Figure 8.
8. These parameters are not tested but are guaranteed by design.
9. The ratio select pin is not intended to be switched dynamically.
Value
Min.
Typ.
Max.
ABSOLUTE MAXIMUM RATINGS
Supply voltage (V
EE
=0V)
Control and RF inputs,
RF output (V
EE
=0V)
RF input current
Operating temperature
Storage temperature range
Maximum junction temperature
NOTE 1. Duration <2 minutes.
(note 1)
-0.5V to 7V
(note 1) -0.5V to V
CC
+0.5V
(note 1)
-40
°
C to +85
°
C
-55
°
C to +150
°
C
10mA
+150
°
C
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