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    參數(shù)資料
    型號: SP6132
    英文描述: Wide Input, 300KHz Synchronous PWM Controller
    中文描述: 寬輸入,300kHz的同步PWM控制器
    文件頁數(shù): 9/14頁
    文件大?。?/td> 314K
    代理商: SP6132
    9
    Date: 8/4/04
    SP6132 Wide Input, 300KHz Synchronous PWM Controller Copyright 2004 Sipex Corporation
    APPLICATIONS INFORMATION: Continued
    The capacitor type suitable for the output capac-
    itors can also be used for the input capacitors.
    However, exercise extra caution when tantalum
    capacitors are considered. Tantalum capacitors are
    known for catastrophic failure when exposed to
    surge current, and input capacitors are prone to
    such surge current when power supplies are con-
    nected “l(fā)ive” to low impedance power sources.
    MOSFET Selection
    The losses associated with MOSFETs can be
    divided into conduction and switching losses.
    Conduction losses are related to the on resistance
    of MOSFETs, and increase with the load current.
    Switching losses occur on each on/off transition
    when the MOSFETs experience both high current
    and voltage. Since the bottom MOSFET switches
    current from/to a paralleled diode (either its own
    body diode or a Schottky diode), the voltage across
    the MOSFET is no more than 1V during switching
    transition. As a result, its switching losses are
    negligible. The switching losses are difficult to
    quantify due to all the variables affecting turn on/
    off time. However, the following equation pro-
    vides an approximation on the switching losses
    associated with the top MOSFET driven by SP6132.
    V
    C
    P
    (max)
    12
    =
    where
    C
    rss
    = reverse transfer capacitance of the top
    MOSFET
    S
    OUT
    IN
    rss
    SH
    F
    I
    (max)
    (max)
    Switching losses need to be taken into account for
    high switching frequency, since they are directly
    proportional to switching frequency. The conduc-
    tion losses associated with top and bottom
    MOSFETs are determined by:
    D
    I
    R
    P
    OUT
    ON
    (
    DS
    CH
    2
    (max)
    )
    (max)
    =
    )
    1
    2
    (max)
    )
    (
    (max)
    D
    I
    R
    P
    OUT
    ON
    DS
    CL
    =
    where
    P
    CH(max)
    = conduction losses of the high side
    MOSFET
    P
    CL(max)
    = conduction losses of the low side
    MOSFET
    R
    DS(ON)
    = drain to source on resistance.
    The total power losses of the top MOSFET are the
    sum of switching and conduction losses. For syn-
    chronous buck converters of efficiency over 90%,
    allow no more than 4% power losses for high or
    low side MOSFETs. For input voltages of 3.3V
    and 5V, conduction losses often dominate switch-
    ing losses. Therefore, lowering the R
    DS(ON)
    of the
    MOSFETs always improves efficiency even
    though it gives rise to higher switching losses due
    to increased
    C
    rss
    .
    Top and bottom MOSFETs experience unequal
    conduction losses if their on time is unequal. For
    applications running at large or small duty cycle, it
    makes sense to use different top and bottom
    MOSFETs. Alternatively, parallel multiple
    MOSFETs to conduct large duty factor.
    R
    DS(ON)
    varies greatly with the gate driver voltage.
    The MOSFET vendors often specify R
    DS(ON)
    on
    multiple gate to source voltages (V
    GS
    ), as well as
    provide typical curve of R
    DS(ON)
    versus V
    GS
    . For
    5V input, use the R
    DS(ON)
    specified at 4.5V V
    GS
    . At
    the time of this publication, vendors, such as
    Fairchild, Siliconix and International Rectifier,
    have started to specify R
    DS(ON)
    at V
    GS
    less than 3V.
    This has provided necessary data for designs in
    which these MOSFETs are driven with 3.3V and
    made it possible to use SP6132 in 3.3V only
    applications.
    Thermal calculation must be conducted to ensure
    the MOSFET can handle the maximum load cur-
    rent. The junction temperature of the MOSFET,
    determined as follows, must stay below the maxi-
    mum rating.
    JA
    MOSFET
    R
    A
    J
    P
    T
    T
    θ
    (max)
    (max)
    (max)
    +
    =
    where
    T
    A(max)
    = maximum ambient temperature
    P
    MOSFET(max)
    = maximum power dissipa-
    tion of the MOSFET
    R
    Θ
    JA
    = junction to ambient thermal resistance.
    R
    Θ
    JA
    of the device depends greatly on the board
    layout, as well as device package. Significant
    相關(guān)PDF資料
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    SP6132EU Wide Input, 300KHz Synchronous PWM Controller
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    SP6133 Evaluation Board Manual
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
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