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參數(shù)資料
| 型號(hào)： | SP6120BEY |
| 英文描述： | Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters |
| 中文描述： | 低電壓，AnyFETTM，同步，降壓控制器適合2A至10A條，高性能，DC - DC電源轉(zhuǎn)換器 |
| 文件頁數(shù)： | 16/22頁 |
| 文件大小： | 304K |
| 代理商： | SP6120BEY |
16
Date: 5/25/04
SP6120B Low Voltage, AnyFET
TM
, Synchronous, Buck Controller Copyright 2004 Sipex Corporation
are prone to such surge current when power
supplies are connected ‘live’ to low impedance
power sources. Certain tantalum capacitors, such
as AVX TPS series, are surge tested. For ge-
neric tantalum capacitors, use 2:1 voltage derat-
ing to protect the input capacitors from surge
fall-out.
MOSFET Selection
The losses associated with MOSFETs can be
divided into conduction and switching losses.
Conduction losses are related to the on resis-
tance of MOSFETs, and increase with the load
current. Switching losses occur on each on/off
transition when the MOSFETs experience both
high current and voltage. Since the bottom
MOSFET switches current from/to a paralleled
diode (either its own body diode or a Schottky
diode), the voltage across the MOSFET is no
more than 1V during switching transition. As a
result, its switching losses are negligible. The
switching losses are difficult to quantify due to
all the variables affecting turn on/off time. How-
ever, the following equation provides an ap-
proximation on the switching losses associated
with the top MOSFET driven by SP6120B.
V
C
P
(max)
12
=
where
C
rss
= reverse transfer capacitance of the top
MOSFET
S
OUT
IN
rss
SH
F
I
(max)
(max)
Switching losses need to be taken into account
for high switching frequency, since they are
directly proportional to switching frequency.
The conduction losses associated with top and
bottom MOSFETs are determined by:
D
I
R
P
OUT
ON
(
DS
CH
2
(max)
)
(max)
=
)
1
2
(max)
)
(
(max)
D
I
R
P
OUT
ON
DS
CL
=
where
P
CH(max)
= conduction losses of the high side
MOSFET
P
CL(max)
= conduction losses of the low side
MOSFET
R
DS(ON)
= drain to source on resistance.
The total power losses of the top MOSFET are
the sum of switching and conduction losses. For
synchronous buck converters of efficiency over
90%, allow no more than 4% power losses for
high or low side MOSFETs. For input voltages
of 3.3V and 5V, conduction losses often domi-
nate switching losses. Therefore, lowering the
R
DS(ON)
of the MOSFETs always improves
efficiency even though it gives rise to higher
switching losses due to increased
C
rss
.
Top and bottom MOSFETs experience unequal
conduction losses if their on time is unequal. For
applications running at large or small duty cycle,
it makes sense to use different top and bottom
MOSFETs. Alternatively, parallel multiple
MOSFETs to conduct large duty factor.
R
DS(ON)
varies greatly with the gate driver volt-
age. The MOSFET vendors often specify R
DS(ON)
on multiple gate to source voltages (V
GS
), as
well as provide typical curve of R
DS(ON)
versus
V
GS
. For 5V input, use the R
DS(ON)
specified at
4.5V V
GS
. At the time of this publication, ven-
dors, such as Fairchild, Siliconix and Interna-
tional Rectifier, have started to specify R
DS(ON)
at V
GS
less than 3V. This has provided necessary
data for designs in which these MOSFETs are
driven with 3.3V and made it possible to use
SP6120B in 3.3V only applications.
Thermal calculation must be conducted to en-
sure the MOSFET can handle the maximum
load current. The junction temperature of the
MOSFET, determined as follows, must stay
below the maximum rating.
JA
MOSFET
R
A
J
P
T
T
θ
(max)
(max)
(max)
+
=
where
T
A(max)
= maximum ambient temperature
P
MOSFET(max)
= maximum power dissipa-
tion of the MOSFET
R
Θ
JA
= junction to ambient thermal resistance.
R
Θ
JA
of the device depends greatly on the board
layout, as well as device package. Significant
thermal improvement can be achieved in the
maximum power dissipation through the proper
design of copper mounting pads on the circuit
board. For example, in a SO-8 package, placing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SP6120CY | Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters |
| SP6120HVEY | High Voltage, Synchronous ,Buck Controller Ideal for 2A to 20A, High Performance, DC-DC Power Converters |
| SP6120HVCY | CAPACITOR, F/TERM 6800PF 50V X8R 0805CAPACITOR, F/TERM 6800PF 50V X8R 0805; CAPACITANCE:6.8NF; VOLTAGE RATING, DC:50V; CAPACITOR DIELECTRIC TYPE:CERAMIC MULTI-LAYER; SERIES:08055F; TOLERANCE, :10%; TOLERANCE, -:10%; TEMP, OP. RoHS Compliant: Yes |
| SP6120EY | Low Voltage, AnyFETTM, Synchronous,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters |
| SP6120HV | High Voltage, Synchronous ,Buck Controller Ideal for 2A to 20A, High Performance, DC-DC Power Converters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SP6120BEY/TR | 制造商:SIPEX 制造商全稱:Sipex Corporation 功能描述:Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters |
| SP6120BEY-L | 功能描述:DC/DC 開關(guān)控制器 Low Voltage, AnyFET Synchronous, Cntrllr RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| SP6120BEY-L/TR | 功能描述:DC/DC 開關(guān)控制器 Low Voltage, AnyFET Synchronous, Cntrllr RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| SP6120CY | 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 Low Voltage, AnyFET Synchronous, Cntrllr RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
| SP6120CY/TR | 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 Low Voltage, AnyFET Synchronous, Cntrllr RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel |
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