參數(shù)資料
型號(hào): SP331ET-L/TR
廠商: Exar Corporation
文件頁(yè)數(shù): 13/13頁(yè)
文件大?。?/td> 0K
描述: IC TXRX RS232/485 PROG 28WSOIC
標(biāo)準(zhǔn)包裝: 1,500
類型: 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù): 4/4
規(guī)程: RS232,RS485
電源電壓: 5V
安裝類型: 表面貼裝
封裝/外殼: 28-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 28-SOIC W
包裝: 帶卷 (TR)
9
Exar Corporation 48720 Kato Road, Fremont CA, 94538 50-668-707 www.exar.com
SP33_00_0260
to ground and transfers the generated l0V
across C
2 to C4, the VDD storage capacitor.
Again, simultaneously with this, the positive
side of capacitor C
is switched to +5V and
the negative side is connected to ground,
and the cycle begins again.
Since both V+ and Vare separately gen-
erated from V
CC in a no–load condition, V+
and Vwill be symmetrical. Older charge
pump approaches that generate Vfrom
V+ will show a decrease in the magnitude
of Vcompared to V+ due to the inherent
inefficiencies in the design.
The clock rate for the charge pump typically
operates at 5kHz. The external capaci-
tors must be 0.F with a 6V breakdown
rating.
External Power Supplies
For applications that do not require +5V only,
external supplies can be applied at the V+
and Vpins. The value of the external sup-
ply voltages must be no greater than ±l0V.
The current drain for the ±0V supplies is
used for RS-232. For the RS-232 driver the
current requirement will be 3.5mAper driver.
The external power supplies should provide
a power supply sequence of :+l0V, then +5V,
followed by –l0V.
VCC = +5V
–5V
+5V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
VCC = +5V
–10V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
VCC = +5V
–5V
+5V
–5V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
VCC = +5V
+10V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
Figure . Charge Pump Phase .
Figure 2. Charge Pump Phase 2.
Figure 3. Charge Pump Phase 3.
Figure 4. Charge Pump Phase 4.
+10V
GND
-10V
a) C2+
b) C2-
Figure 5. Charge Pump Waveforms
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