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參數(shù)資料
| 型號： | SP1001-04XTG |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | GREEN, PLASTIC PACKAGE-5 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 423K |
| 代理商： | SP1001-04XTG |
2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
22
TVS Diode Arrays (SPAFamily of Products)
Revision: June 27, 2011
SP1001 Series
General Purpose ESD Protection - SP1001 Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
I
PP
Peak Current (t
p=8/20μs)
2
A
T
OP
Operating Temperature
-40 to 85
°C
T
STOR
Storage Temperature
-60 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
OP = 25°C)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Forward Voltage Drop
V
F
I
F=10mA
0.7
0.9
1.2
V
Reverse Voltage Drop
V
R
I
R=1mA
7.0
7.8
8.5
V
Reverse Standoff Voltage
V
RWM
I
R≤1A
5.5
V
Reverse Leakage Current
I
LEAK
V
R=5V
0.5
A
Clamp Voltage1
V
C
I
PP=1A, tp=8/20s, Fwd
8.0
11.0
V
I
PP=2A, tp=8/20s, Fwd
9.7
13.0
V
Dynamic Resistance
R
DYN
(V
C2 - VC1) / (IPP2 - IPP1)
1.7
Ω
ESD Withstand Voltage1,2
V
ESD
IEC61000-4-2 (Contact)
±15
kV
IEC61000-4-2 (Air)
±30
kV
Diode Capacitance1
C
D
Reverse Bias=0V
12
pF
Reverse Bias=2.5V
8
pF
Reverse Bias=5V
7
pF
Notes:
1
Parameter is guaranteed by device characterization
2
A minimum of 1,000 ESD pulses are applied at 1s intervals between the anode and common cathode of each diode
Thermal Information
Parameter
Rating
Units
Storage Temperature Range
-65 to 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature (Soldering
20s-40s)
260
°C
Capacitance vs. Reverse Bias
0
2
4
6
8
10
12
14
DC Bias (V)
Capacitance
(pF)
0
0.5
11.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Design Consideration
Because of the fast rise-time of the ESD transient,
placement of ESD devices is a key design consideration.
To achieve optimal ESD suppression, the devices should be
placed on the circuit board as close to the source of the ESD
transient as possible. Install the ESD suppressors directly
behind the connector so that they are the first board-level
circuit component encountered by the ESD transient. They
are connected from signal/data line to ground.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SP1001-02JTG | BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MO-203 |
| SP1001-04JTG | BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-203AA |
| SP1001-05XTG | BIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE |
| SP1003-01DTG | UNIDIRECTIONAL, SILICON, TVS DIODE |
| SP1N6077US | 1.3 A, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SP1001-04XTG | 制造商:Littelfuse 功能描述:TVS Diode 制造商:Littelfuse 功能描述:DIODE, TVS, ESD PROTECTION, 12pF |
| SP1001-05JTG | 功能描述:TVS二極管陣列 5 channels RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| SP1001-05VTG | 功能描述:TVS二極管陣列 5 Ch 8KV 5V 8pF RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| SP1001-05XTG | 功能描述:TVS二極管陣列 5 channels RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| SP1001-05XTG | 制造商:Littelfuse 功能描述:ESD Protection Diode Array |
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