
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
1
http://www.stanfordmicro.com
EDS-101397 Rev A
Preliminary
Product Description
5
10
15
20
25
0
2
6
8
Stanford Microdevices’ SNA-586 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration is utilized for broadband performance
up to 5 GHz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression of
intermodulation products. Typical IP3 at 850 MHz with 65mA is
32.5 dBm.
These unconditionally stable amplifiers provide 18 dB of gain and
18.4 dBm of 1dB compressed power and require only a single
positive voltage supply. Only 2 DC-blocking capacitors, a bias
resistor and an optional inductor are needed for operation. This
MMIC is an ideal choice for wireless applications such as
cellular, PCS, CDPD, wireless data and SONET.
SNA-586
DC-5 GHz, Cascadable
GaAs HBT MMIC Amplifier
NGA-586 Recommended for New Designs
Product Features
High Output IP3: 32.5 dBm @ 850 MHz
Cascadable 50 Ohm Gain Block
Patented GaAs HBT Technology
Operates From Single Supply
Applications
Cellular, PCS, CDPD, Wireless Data, SONET
Electrical Specifications
GHz
5
6
l
b
m
y
S
:
n
=
T
o
n
o
C
t
e
T
I
m
h
:
r
e
O
t
0
5
m
a
r
=
a
P
Z
0
D
C
°
5
2
,
A
=
s
U
.
M
.
y
T
.
a
M
P
B
d
1
n
o
s
e
r
m
o
C
B
d
1
t
r
w
o
P
t
p
O
z
H
H
H
M
M
M
0
5
9
1
0
4
2
0
5
8
=
=
=
f
f
f
z
z
0
m
m
m
B
B
B
d
d
d
6
1
4
1
4
1
P
I
3
t
P
d
0
t
e
e
n
c
o
r
p
r
d
t
o
r
O
d
r
r
T
o
P
m
B
=
w
z
H
H
H
M
M
M
0
5
9
1
0
4
2
0
5
8
=
=
=
f
f
f
z
z
0
m
m
m
B
B
B
d
d
d
5
3
6
3
6
3
S
1
2
n
G
l
n
g
l
m
S
z
H
H
H
M
M
M
0
5
9
1
0
4
2
0
5
8
=
=
=
f
f
f
z
z
0
B
B
B
d
d
d
6
1
6
1
1
1
4
1
h
w
d
n
a
B
S
y
b
d
e
n
m
r
D
(
1
1
S
,
2
2
)
e
u
V
z
H
M
0
0
0
5
S
1
1
R
W
S
V
t
p
n
z
H
M
0
0
0
5
-
C
D
=
f
-
1
S
2
2
R
W
S
V
t
p
O
z
H
M
0
0
0
5
-
C
D
=
f
-
1
S
2
1
n
o
s
e
s
v
e
R
z
H
H
H
M
M
M
0
5
9
1
0
4
2
0
5
8
=
=
=
f
f
f
z
z
0
B
B
B
d
d
d
3
2
6
2
3
2
F
N
Z
,
r
g
e
s
N
S
s
m
h
O
0
5
=
z
H
M
0
5
9
1
=
f
B
d
0
V
D
e
g
a
V
e
c
e
D
V
4
9
4
l
R
)
a
e
n
o
n
u
e
c
n
a
e
R
l
m
r
h
T
o
W
/
C
4
5
2
dB
Small Signal Gain vs. Frequency @ I
D
=65mA
Frequency GHz