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參數(shù)資料
| 型號： | SNA-476-TR1 |
| 廠商： | SIRENZA MICRODEVICES INC |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | SNA-476-TR1 |
Product Description
Stanford Microdevices’ SNA-476 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline ceramic package. This amplifier
provides 13dB of gain when biased at 70mA and 5.0V.
External DC decoupling capacitors determine low
frequency response. The use of an external resistor
allows for bias flexibility and stability.
These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also available
in chip form (SNA-400), its small size (0.4mm x 0.4mm) and
gold metallization, make it an ideal choice for use in hybrid
circuits.
The SNA-476 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-476
DC-8 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
13dB Gain, +17dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Low Cost Stripline Mount Ceramic Package
Hermetically Sealed
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
Sy m b o l
P a r a m e te r s : T e s t C o n d i ti o n s :
I d = 70m A , Z
0
= 50 O h m s
Un i t s
Mi n .
Ty p .
M ax.
G
P
S m al l S i gnal P o w e r G a in
f = 0. 1- 2. 0 G H z
f = 2. 0- 6. 0 G H z
f = 6. 0- 8. 0 G H z
dB
11 . 0
10. 0
9. 0
13. 0
12. 0
11 . 0
G
F
G a i n F l at nes s
f = 0. 1- 6. 0 G H z
d B
+ / - 1. 0
B W 3dB
3dB B andw i d t h
GH z
8 . 0
P
1dB
O u t put P o w e r at 1dB C o m p r e s s i on
f = 2. 0 G H z
d B m
17. 0
N F
N o i s e F i gur e
f = 2. 0 G H z
d B
5 . 5
6. 0
V S W R
I nput / O u t put
f = 0. 1- 8. 0 G H z
1 . 5 : 1
IP
3
T h i r d O r der I n t e r c ept P o i n t
f = 2. 0 G H z
d B m
34. 0
T
D
G r oup D e la y
f = 2. 0 G H z
p s e c
120
I S O L
R e v e r s e I s olat i o n
f = 0. 1- 8. 0 G H z
d B
18. 0
V D
D e vi ce V o l t a g e
V
4 .3
5 . 0
5 .7
dG / d T
D ev i c e G a i n T e m per at ur e C oef f i c i ent
dB / degC
- 0 . 0027
dV / d T
D ev i c e V o l t age T e m per at ur e C oef f i c i ent
m V / degC
- 5 . 0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
50
Ohm
Gain
Blocks
Output Power vs. Frequency
14
16
18
20
22
0.1
0.5
1
1.5
2468
10
GHz
dBm
5-57
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