參數(shù)資料
型號(hào)： SN74V3670-15PEU
廠商： Texas Instruments, Inc.
英文描述： 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
中文描述： 的3.3V的CMOS先入先出存儲(chǔ)器
文件頁數(shù)： 50/50頁
文件大?。?/td> 729K
代理商： SN74V3670-15PEU
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參數(shù)描述
SN74V3670-6PEU 功能描述:先進(jìn)先出 8192 x 36 Synch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74V3670-7PEU 功能描述:先進(jìn)先出 8192 x 36 Synch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74V3680-10PEU 功能描述:先進(jìn)先出 16384 x 36 Synch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74V3680-15PEU 功能描述:先進(jìn)先出 16384 x 36 Synch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74V3680-6PEU 功能描述:先進(jìn)先出 16384 x 36 Synch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
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