- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373470 > SN74ALS229B (Texas Instruments, Inc.) 16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | SN74ALS229B |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY |
| 中文描述： | 16】5異步先入先出存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 298K |
| 代理商： | SN74ALS229B |
SN74ALS229B
16
×
5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS090 – MARCH 1990 – REVISED JUNE 1992
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Independent Asychronous Inputs and
Outputs
16 Words by 5 Bits
Data Rates From 0 to 40 MHz
Fall-Through Time . . . 14 ns Typ
3-State Outputs
Package Options Include Plastic
Small-Outline Packages (DW), Plastic Chip
Carriers (FN), and Standard Plastic 300-mil
DIPs (N)
description
This 80-bit memory uses advanced low-power
Schottky technology and features high speed and
fast fall-through times. It is organized as 16 words
by 5 bits.
A FIFO memory is a storage device that allows
data to be written into and read from its array at
independent data rates. This FIFO is designed to
process data at rates from 0 to 40 MHz in a
bit-parallel format, word by word.
Data is written into memory on a low-to-high
transition at the load clock (LDCK) input and is
read out on a low-to-high transition at the unload
clock (UNCK). The memory is full when the
number of words clocked in exceeds by 16 the
number of words clocked out. When the memory
is full, LDCK signals have no effect. When the
memory is empty, UNCK signals have no effect.
Status of the FIFO memory is monitored by the FULL, EMPTY, FULL–2, and FULL+2 output flags. The FULL
output is low when the memory is full and high when it is not full. The FULL–2 output is low when the memory
contains 14 data words. The EMPTY output is low when the memory is empty and high when it is not empty.
The EMPTY+2 output is low when two words remain in memory.
A low level on the reset (RST) input resets the internal stack control pointers and also sets EMPTY low and sets
FULL, FULL–2, and EMPTY+2 high. The Q outputs are not reset to any specific logic level. The first low-to-high
transition on LDCK after either a RST pulse or from an empty condition causes EMPTY to go high and the data
to appear on the Q outputs. It is important to note that the first word does not have to be unloaded. Data outputs
are noninverting with respect to the data inputs and are at high impedance when the output-enable (OE) input
is low. OE does not affect the output flags. Cascading is easily accomplished in the word-width direction but is
not possible in the word-depth direction.
The SN74ALS229B is characterized for operation from 0
°
C to 70
°
C.
Copyright
1992, Texas Instruments Incorporated
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
OE
FULL–2
FULL
LDCK
D0
D1
D2
D3
D4
GND
V
CC
EMPTY+2
UNCK
EMPTY
Q0
Q1
Q2
Q3
Q4
RST
DW OR N PACKAGE
(TOP VIEW)
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
UNCK
EMPTY
Q0
Q1
Q2
LDCK
D0
D1
D2
D3
FN PACKAGE
(TOP VIEW)
F
F
O
Q
Q
E
D
G
R
V
C
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SN74ALS229BDW | 16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY |
| SN74ALS231N | OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS |
| SN74AS231 | OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS |
| SN74AS231DW | OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS |
| SN74AS231N | OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SN74ALS229BDW | 功能描述:先進(jìn)先出 16 x 5 asynchronous 先進(jìn)先出 memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問(wèn)時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝: |
| SN74ALS229BN | 功能描述:先進(jìn)先出 16 x 5 asynchronous 先進(jìn)先出 memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問(wèn)時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝: |
| SN74ALS231DW | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SN74ALS231N | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SN74ALS232BDW | 功能描述:先進(jìn)先出 16 x 4 asynchronous 先進(jìn)先出 memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問(wèn)時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。