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參數(shù)資料
| 型號(hào)： | SMLA42CSM |
| 英文描述： | Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vcbo:300V,Vceo:300V,Vebo:6V)) |
| 中文描述： | 高壓硅npn型晶體管在陶瓷表面貼裝（Vcbo：300V，Vceo：300V，Vebo：6V的）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場(chǎng)效應(yīng)管（Vcbo：300V，Vceo：300V，Vebo：6V的）） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 16K |
| 代理商： | SMLA42CSM |
SMLA42CSM
Prelim. 7/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
CBO
V
CEO
V
EBO
I
C
P
D
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation
Derate Above 25°C
Maximum Junction Temperature
Storage Temperature Range
T
j
T
stg
300V
300V
6V
500mA
350mW
2.0mW/°C
200°C
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
SILICON NPN
HIGH VOLTAGE TRANSISTOR
IN CERAMIC SURFACE MOUNT
PACKAGE
FEATURES
HIGH BREAKDOWN VOLTAGE
LOW SATURATION VOLTAGES
LOW CAPACITANCE
HERMETIC CERAMIC SURFACE
MOUNT PACKAGE SOT23CSM
(SOT23 COMPATIBLE)
SOT23 CERAMIC
(LCC1 PACKAGE)
PAD 1
–
Base
Underside View
PAD 2
–
Collector
PAD 3
–
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMLA42CSM_04 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE |
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