- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄379394 > SML20S56 (SEMELAB LTD) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS PDF資料下載
參數(shù)資料
| 型號(hào)： | SML20S56 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | SML20S56 |
SML20W65
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1 3
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1 3
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
200
65
260
±30
±40
400
3.2
–55 to 150
300
65
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 1.18mH, R
G
= 25
, Peak I
L
= 65A
3) Maximum current limited by package.
V
DSS
I
D(cont)
R
DS(on)
0.026
200V
65A
Faster Switching
Lower Leakage
TO–267 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
TO–267 Package Outline.
Dimensions in mm (inches)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML20T75 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20B67 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20J97 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20S67 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| SML3010T254 | FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO-254 METAL PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML20S67 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20T75 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20W65 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML-21 | 制造商:ROHM 制造商全稱:Rohm 功能描述:SML-21 Series |
| SML-21_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Abundant color variations with diverse luminous intensity types |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。