- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40348 > SML20EUZ12K (SEMELAB LTD) 20 A, 1200 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | SML20EUZ12K |
| 廠商： | SEMELAB LTD |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 40K |
| 代理商： | SML20EUZ12K |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 2365
Issue 1
SML20EUZ12K
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Enhanced Ultrafast
Recovery Diode
1200 Volt, 20 Amp
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
BENEFITS
Very fast recovery for low switching losses
Ultra soft recovery with low EMI generation
High dynamic ruggedness under all conditions
Low temperature dependency
Low on-state losses with positive temperature coefficient
Stable blocking voltage and low leakage current
Avalanche rated for high reliability circuit operation
APPLICATIONS
Freewheeling Diode for IGBTs and MOSFETs
Uninterruptible Power Supplies UPS
Switch Mode Power Supplies SMPS
Inverse and Clamping Diode
Snubber Diode
Fast Switching Rectification
VRRM
Peak Repetitive Reverse Voltage
VR
DC Reverse Blocking Voltage
IFAV
Average Forward Current @Tc = 85°C
IFSM(surge)
Repetitive Forward Current
IFS(surge)
Non-Repetitive Forward Current
PD
Power Dissipation @Tc = 85°C
WAVL
Avalanche Energy (L=40mH)
TJ ,TSTG
Operating & Storage Junction Temperature
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1200V
20A
50A
200A
70W
20mJ
-55 to 150°C
12
Back of Case
Cathode
1- Cathode
2 - Anode
SML
20EUZ12K
12
See package outline for mechanical data and more details
D2 PAK Package
Key Parameters
VR (max) 1200V
VF
(typ)
3.2V
IF
(max) 20A
trr
(max) 40ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML20EUZ12S | 20 A, 1200 V, SILICON, RECTIFIER DIODE |
| SML20SUZ03DR3 | 20 A, 300 V, SILICON, RECTIFIER DIODE, TO-220 |
| SML25EUZ06BC | 25 A, 600 V, SILICON, RECTIFIER DIODE |
| SML25EUZ06KR3 | 25 A, 600 V, SILICON, RECTIFIER DIODE |
| SML25SUZ06BCR3 | 25 A, 600 V, SILICON, RECTIFIER DIODE, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML20H45 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20J122 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20J175 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20J97 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20L100 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。