參數(shù)資料
型號： SML10J225
廠商： SEMELAB LTD
元件分類： JFETs
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： 225 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/2頁
文件大小： 20K
代理商： SML10J225
SML10L100
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
100
100
400
±30
±40
520
4.16
–55 to 150
300
100
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 500μH, R
G
= 25
W
, Peak I
L
= 100A
V
DSS
I
D(cont)
R
DS(on)
0.011
W
100V
100A
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular TO–264 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
5
6
2
2
2
2
1
2
19.51 (0.768)
26.49 (0.807)
1.80 (0.071)
2.01 (0.079)
4.60 (0.181)
5.21 (0.205)
2.79 (0.110)
3.18 (0.125)
5.45 (0.215) BSC
2 plcs.
0.76 (0.030)
1.30 (0.051)
2.29 (0.090)
2.69 (0.106)
2.59 (0.102)
3.00 (0.118)
0.48 (0.019)
0.84 (0.033)
1
2
3
3.10 (0.122)
3.48 (0.137)
TO–264AA Package Outline.
Dimensions in mm (inches)
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
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