參數(shù)資料
型號(hào)： SML100H9
廠商： SEMELAB LTD
元件分類(lèi)： JFETs
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： 9 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
封裝： TO-258, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 26K
代理商： SML100H9
SML100H11
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
11
44
±30
±40
250
2.0
–55 to 150
300
11
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 21.49mH, R
G
= 25
, Peak I
L
= 11A
V
DSS
I
D(cont)
R
DS(on)
0.880
1000V
11A
Faster Switching
Lower Leakage
TO–258 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
1
1
1
1
1
1
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
2
2
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO–258 Package Outline.
Dimensions in mm (inches)
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
相關(guān)PDF資料
PDF描述
SML100S11 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100S13 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100T21 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100W18 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML10SIC03YC SiC SCHOTTKY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SML100HB06 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:HIGH PERFORMANCE POWER SEMICONDUCTORS
SML100J19 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100J22 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100J34 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100M12MSF 功能描述:肖特基二極管與整流器 1200V NORMALLY OFF PWR SiC JFET RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*