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參數(shù)資料
| 型號(hào)： | SML1001R1AN |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | SML1001R1AN |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukCharacteristic
Input capacitance
Test Conditions.
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min.
Typ.
2460
Max. Unit
2950
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions.
Part Number
Min.
Typ.
Max.
9.5
Unit
8.5
38
34
1.3
320
636
1200
2.2
4.5
9
Prelim. 12/00
LA B
S E M E
SML1001R1AN 1000V 9.5A 1.10
W
SML901R1AN
900V
SML1001R3AN 1000V 8.5A 1.30
W
SML901R3AN
900V
9.5A 1.10
W
8.5A 1.30
W
I
S
I
SM
V
SD
t
rr
Q
rr
SML1001R1AN / SML901R1AN
SML901R3AN / SML901R3AN
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V , I
S
= – I
D
[Cont.])
Reverse Recovery Time
(I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
Reverse Recovery Charge
A
A
V
ns
m
C
Characteristic / Test Conditions / Part Number
Safe Operating Area
Min.
230
Typ.
Max.
Unit
230
38
34
SOA1
SOA2
I
LM
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec
I
DS
= I
DS
[Cont.] , V
DS
= P
D
/ I
D
[Cont.] , t = 1 Sec
SML1001R1AN / SML901R1AN
Safe Operating Area
Inductive Current Clamped
W
A
Characteristic / Test Conditions.
J unction to Case
Min.
Typ.
Max.
0.53
Unit
°C/W
30
300
R
q
J C
R
q
J A
T
L
J unction to Ambient
Max. Lead Temperature for Soldering Conditions: 0.065
” from Case for 10 sec.
°C/W
°C
DYNAMIC CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
(T
case
=25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Output capacitance
Reverse transfer capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 10V
I
D
= I
D
[Cont.]
V
DD
= 0.5 V
DSS
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
V
GS
= 15V
R
G
= 1.8
W
pF
nC
ns
360
500
105
160
90
130
9.3
14
47
70
15
30
16
32
64
95
24
48
SML1001R3AN / SML901R3AN
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