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UVEPROM
SMJ27C010A
Austin Semiconductor, Inc.
SMJ27C010A
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
Organized 131,072 x 8
Single +5V ±10% power supply
Operationally compatible with existing megabit EPROMs
Industry standard 32-pin ceramic dual-in-line package
All inputs/outputs fully TTL compatible
8-bit output for use in microprocessor-based systems
Very high-speed SNAP! Pulse Programming
Power-saving CMOS technology
3-state output buffers
400mV minimum DC noise immunity with standard
TTL loads
Latchup immunity of 250 mA on all input and output pins
No pullup resistors required
Low power dissipation (Vcc = 5.5V)
P
Active - 165 mW Worst Case
P
Standby - 0.55 mW Worst Case (CMOS-input levels)
OPTIONS
Timing
120ns access
150ns access
200ns access
MARKING
-12
-15
-20
Package(s)
Ceramic DIP (600mils)
J
No. 114
Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
M
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-89614
MIL-STD-883
32-Pin DIP (J)
(600 MIL)
1 MEG UVEPROM
UV Erasable Programmable
Read-Only Memory
For more products and information
please visit our web site at
www.austinsemiconductor.com
GENERAL DESCRIPTION
The SMJ27C010A series are 131072 by 8-bit (1048576-
bit), ultaviolet (UV) light erasable, electrically programmable
read-only memories (EPROMs).
These devices are fabricated using power-saving CMOS
technology for high speed and simple interface with MOS and
bipolar circuits. All inputs (including program data inputs)
can be driven by Series 54 TTL circuits without the use of
external pullup resistors. Each output can drive one Series 54
TTL circuit without external resistors.
The SMJ27C010A EPROM is offered in a ceramic
dual-in-line package (J suffix) designed for insertion in
mounting-hole rows on 15.2mm (600mil) centers.
These EPROMs operate from a single 5V supply (in the
read mode), and therefore, are ideal for use in
microprocessor-based systems. One other 13V supply is
needed for programming. All programming signals are TTL
level. These devices are programmable using the SNAP! Pulse
programming algorithm. The SNAP! Pulse programming
algorithm uses a V
PP
of 13V and a V
CC
of 6.5V for a nominal
programming time of thirteen seconds. For programming
outside the system, existing EPROM programmers can be
used. Locations can be programmed singly, in blocks, or at
random.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
Vcc
PGM\
NC
A14
A13
A8
A9
A11
G\
A10
E\
DQ7
DQ6
DQ5
DQ4
DQ3
Pin Name
A0 - A18
DA0-DQ7 Inputs (programming)/Outputs
E\
Chip Enable
G\
Output Enable
GND
Ground
PGM\
Program
V
CC
5V Supply
V
PP
13V Power Supply*
*Only in program mode.
Function
Address Inputs