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參數(shù)資料
| 型號(hào)： | SMF8.0A |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 靜電保護(hù)器 |
| 英文描述： | Surface Mount ESD Protection Diodes |
| 中文描述： | 表面貼裝ESD保護(hù)二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 213K |
| 代理商： | SMF8.0A |
SMF5V0A to SMF51A
Vishay Semiconductors
Document Number 85811
Rev. 2.0, 29-Apr-05
www.vishay.com
1
17249
Surface Mount ESD Protection Diodes
Features
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 61000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in
accordance with IEC 61000-4-4 (IEC801-4)
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
Low incremental surge resistance, excellent
clamping capability
200 W peak pulse power capability with a
10/1000
μ
s waveform, repetition rate
(duty cycle): 0.01 %
Very fast response time
High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case:
JEDEC DO-219AB (SMF
) Plastic case
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position:
Any
Weight:
approx. 15 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power dissipation
1)
Non-repetitive current pulse and derated above T
A
= 25 °C
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Thermal resistance
2)
Operation junction and storage
temperature range
2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (
≥
40 μm thick)
Test condition
Symbol
P
PPM
P
PPM
I
PPM
Value
200
Unit
W
10/1000
μ
s waveform
1)
8/20
μ
s waveform
1)
10/1000
μ
s waveform
1)
1000
W
Peak pulse current
next
Table
20
A
Peak forward surge current
8.3 ms single half sine-wave
I
FSM
A
Test condition
Symbol
R
thJA
T
stg
, T
J
Value
180
Unit
K/W
- 55 to + 150
°C
e3
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