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參數(shù)資料
| 型號： | SMF33A/G1 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| 封裝： | PLASTIC, SMF, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | SMF33A/G1 |
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000s waveform
(1)
PPPM
200
W
8/20s waveform
1000
Peak pulse current with a 10/1000s waveform
(1)
IPPM
See Next Table
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
20
A
uni-directional only
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Note: (1) Non-repetitive current pulse and derated above TA = 25°C
Detail Z
enlarged
0.00 – 0.10
Top View
1.0
± 0.2
1.8
± 0.1
2.8
± 0.1
0.98
± 0.1
0.05 - 0.30
3.7
± 0.2
0.60
± 0.25
5
°
5
°
Z
Cathode Band
SMF5.0A thru SMF51A
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 51V
Peak Pulse Power 1000W (8/20s pulse)
200W (10/1000s pulse)
Dimensions in
millimeters
DO-219AB (SMF)
1/21/02
Features
For surface mounted applications.
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accor-
dance with IEC 1000-4-4 (IEC801-4)
Glass passivated junction
Low incremental surge resistance, excellent
clamping capability
200W peak pulse power capability with a 10/1000s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
Mechanical Data
Case: Low-profile plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.01g
Packaging codes-options:
G1-10K per 13” reel (8mm tape), 50K/box
G2-3K per 7” reel (8mm tape), 30K/box
Mounting Pad Layout
New
Product
Patented
1.6
1.2
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| SMF12A-M-08 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| SMF15A-M-18 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| SMF24A-M-18 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| SMF28A-M-18 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| SMF33A-M-08 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SMF33A-GS08 | 功能描述:ESD 抑制器 33 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| SMF33A-GS18 | 功能描述:ESD 抑制器 33 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| SMF33A-M-08 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF33A-M-18 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF33AT1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 33V 200W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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