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參數(shù)資料
| 型號(hào)： | SMF30A-GS08 |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMF, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 72K |
| 代理商： | SMF30A-GS08 |
www.vishay.com
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85811
2
Rev. 2.5, 22-Sep-10
SMF5V0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection
Diodes
SMF26A
SMF
CE
15 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
SMF28A
CG
SMF30A
CK
SMF33A
CM
SMF36A
CP
SMF40A
CR
SMF43A
CT
SMF45A
CV
SMF48A
CX
SMF51A
CZ
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE CODE
WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
tp = 10/1000 s waveform acc. IEC 61000-4-5
IPPM
see “Electrical
Characteristics”
A
Peak pulse power
tp = 10/1000 s waveform acc. IEC 61000-4-5
PPP
200
W
tp = 8/20 s waveform acc. IEC 61000-4-5
1000
W
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
Thermal resistance
Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads (
≥ 40 m thick)
RthJA
180
K/W
Forward clamping voltage
IF = 12 A
VF
3.5
V
Operating temperature
Junction temperature
TJ
- 55 to + 150
°C
Storage temperature
TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
REVERSE
BREAKDOWN
VOLTAGE
at IT, tp
≤ 5 ms
TEST
CURRENT
REVERSE
WORKING
VOLTAGE
REVERSE
CURRENT
at VRWM
MAXIMUM
PEAK PULSE
CURRENT
tp = 10/1000 s
REVERSE
CLAMPING
VOLTAGE
at IPPM
CAPACITANCE
at VR = 0 V,
f = 1 MHz
PROTECTION
PATHS
VBR MIN.
(V)
IT
(mA)
VRWM
(V)
IR
(A)
IPPM
(A)
VC
(V)
CD TYP.
(pF)
Nchannel
SMF5V0A
6.40
10
5
400
21.7
9.2
1030
1
SMF6V0A
6.67
10
6
400
19.4
10.3
1010
1
SMF6V5A
7.22
10
6.5
250
17.9
11.2
850
1
SMF7V0A
7.78
10
7
100
16.7
12
750
1
SMF7V5A
8.33
1
7.5
50
15.5
12.9
730
1
SMF8V0A
8.89
1
8
25
14.7
13.6
670
1
SMF8V5A
9.44
1
8.5
10
13.9
14.4
660
1
SMF9V0A
10
1
9
5
13.5
15.4
620
1
SMF10A
11.1
1
10
2.5
11.8
17
570
1
SMF11A
12.2
1
11
2.5
11
18.2
460
1
SMF12A
13.3
1
12
2.5
10.1
19.9
440
1
SMF13A
14.4
1
13
1
9.3
21.5
420
1
SMF14A
15.6
1
14
1
8.6
23.2
370
1
SMF15A
16.7
1
15
1
8.2
24.4
350
1
SMF16A
17.8
1
16
1
7.7
26
340
1
SMF17A
18.9
1
17
1
7.2
27.6
310
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMF30A-GS18 | 功能描述:ESD 抑制器 30 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類(lèi)型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| SMF30A-M | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes |
| SMF30A-M-08 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF30A-M-18 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF30AT1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 30V 200W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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