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參數(shù)資料
| 型號： | SMF26AT/R7 |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 103K |
| 代理商： | SMF26AT/R7 |
PAGE . 1
May 04.2010-REV.00
SMF5.0A~SMF170A
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE
5.0 to 170 Volts
200 Watts
FEATURES
For surface mounted applications in order to optimize board space.
Low profile paceage
Built-in strain relief
Low inductance
High temperature soldering : 260OC/10 seconds at terminals
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: JEDEC DO-219AB,Molded plastic over passivated junction.
Terminals: Solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes positive end (cathode)
Weight: 0.0006 ounce, 0.0172 gram
Standrad Packaging : 8mm tape (EIA-481)
CURRENT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Rating
Symbol
Value
Units
Peak Pulse Power Dissipation on T
A = 25
OC (Notes 1,2,5, Fig.1)
PPPM
200
Watts
Peak Forward Surge Current per (Note 3)
IFSM
20
Amps
Peak Pulse Current on 10/1000s waveform(Note 1)Fig.2
IPPM
see Table 1
Amps
Steady State Power Dissipation (NOTE 4)
PM(AV)
1.0
Watts
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
OC
Thermal resistance
Rθ
JA
180
OC
NOTES :
1.Non-repetitive current pulse, per Fig.3 and derated above T
A=25
OC per Fig.2 .
2.Mounted on 5.0mm2 copper pads to each terminal.
3.8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
4.lead temperature at 75OC =T
L .
5.Peak pulse power waveform is 10/1000
μs.
1
2
Cathode
Anode
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