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參數(shù)資料
| 型號(hào)： | SMF160AT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 498-01, SOD-123FL, 2 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | SMF160AT1G |
SMF5.0AT1 Series
http://onsemi.com
4
tP, PULSE WIDTH (ms)
100
1000
10,000
1.0
10
100
10
0
123
4
0
50
100
t, TIME (ms)
V
ALUE
(%)
HALF VALUE -
IRSM
2
PEAK VALUE - IRSM
tr
TYPICAL PROTECTION CIRCUIT
Vin
VL
Zin
LOAD
tP
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF IRSM.
Figure 1. Pulse Rating Curve
Figure 2. 10 X 1000
ms Pulse Waveform
1000
10,000
Figure 3. 8 X 20
ms Pulse Waveform
P
,PEAK
POWER
(W
A
TTS)
tr ≤ 10 ms
100
80
60
40
20
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
120
140
160
Figure 4. Pulse Derating Curve
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
°C
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (
ms)
%
OF
PEAK
PULSE
CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
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|---|---|
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