- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40345 > SMF05.TG 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE PDF資料下載
參數(shù)資料
| 型號： | SMF05.TG |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SC70-5L, 5 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 184K |
| 代理商： | SMF05.TG |
3
2003 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SMF05 and SMF12
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100
125
150
Ambient Temperature - TA (
oC)
%
of
Ra
te
d
P
o
w
er
or
I PP
Power Derating Curve
Pulse Waveform
SMF05 Insertion Loss S21
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Duration - tp (s)
Peak
Pu
ls
ePo
w
er
-
P
pk
(kW
)
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (s)
Pe
rcen
to
fI
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8s
td = 20s
0
5
10
15
20
25
30
02
46
8
10
12
14
Peak Pulse Current - IPP (A)
C
la
m
ping
V
o
lt
ag
e-
V
C
(V)
SMF12
SMF05
Waveform
Parameters:
tr = 8s
td = 20s
Clamping Voltage vs. Peak Pulse Current
Capacitance vs. Reverse Voltage
0
20
40
60
80
100
120
140
160
01
23
4
5
6
Reverse Voltage - VR (V)
C
ap
aci
tan
ce
-
C
j(
pF)
f = 1MHz
SMF05
START. 030 MHz
3
STOP 000.000000 MHz
CH1 S21 LOG
6 dB / REF 0 dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMF12.TGT | 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| SMF12.TCT | 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| SMF12A-GS18 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| SMF13A-GS18 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| SMF15A-GS08 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMF06020 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Power Optimized GaAs FET |
| SMF-06020 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Power Optimized GaAs FET |
| SMF1.25 | 制造商:Ferraz Shawmut 功能描述: |
| SMF1.5 | 制造商:Ferraz Shawmut 功能描述: |
| SMF1.6 | 制造商:Ferraz Shawmut 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。