參數(shù)資料
型號: SMDA12C-4
廠商: SENSITRON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: SO-8
文件頁數(shù): 2/3頁
文件大小: 87K
代理商: SMDA12C-4
SMDA03C-4
thru
SMDA24C-4
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1905, REV. -
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
Page 2
ELECTRICAL CHARACTERISTICS @ 25
°C
Part Number
Stand-off
Voltage
Vwm
(v)
Max
Breakdown
Voltage
VBR
@1mA
(V)
Min
Clamping
Voltage
Vc
@ 1 A
(V)
Max
Leakage
Current
IR
@ Vwm
(
A)
Max
Capacitance
(f = 1MHz)
C
@ 0V
(pF)
Max
Temperature
Coefficient
of VBR
a(VBR)
mv/
°C
Max
SMDA03C-4
3.3
4
7
200
300
-5
SMDA05C-4
5.0
6
9.8
40
200
3
SMDA12C-4
12.0
13.3
19
1
185
10
SMDA15C-4
15.0
16.7
24
1
140
13
SMDA24C-4
24.0
26.7
43
1
90
30
PACKAGE OUTLINES & DEMENSIONS
INCHES
MILLIMETERS
DIM
MIN.
MAX
MIN.
MAX.
A
0.189
0.196
4.8
5.0
B
0.150
0.157
3.8
4.0
C
0.053
0.069
1.35
1.75
D
0.011
0.021
0.28
0.53
F
0.016
0.050
0.41
1.27
G
0.050 BSC
1.27 BSC
J
0.006
0.010
0.15
0.25
K
0.004
0.008
0.10
0.20
L
0.189
0.206
4.80
5.23
P
0.228
0.244
5.79
6.19
TYPICAL CHARACTERISTICS
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (
s)
Percent
of
I
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8
s
td = 20
s
Figure 1. Peak Pulse Power Vs Pulse Time (
s)
Figure 2. Pulse Wave Form
Time (
s)
10000
1000
100
10
.1
1
10
100
1000
10000
8/20s 300W Pulse
相關PDF資料
PDF描述
SMDA12CN-5-T7 500 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
SMDA15CN-5-T7 500 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
SMDA05CN-5-LF-T13 500 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
SMDA05CN-5-LF 500 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
SMDA12CN-5-LF-T13 500 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
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