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參數(shù)資料
| 型號(hào)： | SMCTTA32N14A10 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Advanced Pulse Power Device N-MOS VCS, ThinPakTM |
| 中文描述： | 先進(jìn)的脈沖功率器件蘼馬鞍山VCS有ThinPakTM |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 671K |
| 代理商： | SMCTTA32N14A10 |
Description
Package
Schematic Symbol
Features
Absolute Maximum Ratings
SYMBOL
VALUE
UNITS
Peak Off-State Voltage
V
DRM
1400
V
Peak Reverse Voltage
V
RRM
-5
V
Off-State Rate of Change of Voltage Immunity
dv/dt
I
A110
5000
V/uSec
Continuous Anode Current at 110
o
C
32
A
Repetitive Peak Anode Current (Pulse Width=1uSec)
I
ASM
4000
A
Rate of Change of Current
dI/dt
V
GKS
150
kA/uSec
Continuous Gate-Cathode Voltage
+/-20
V
Peak Gate-Cathode Voltage
V
GKM
+/-25
V
Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State
V
GK(OFF-MIN)
-5
V
Maximum Junction Temperature
T
JM
150
o
C
Maximum Soldering Temperature (Installation)
260
o
C
This
SILICON POWER
product is protected by one or more of the following U.S. Patents:
ThinPak
TM
Gate Bond Area
Gate Return
Bond Area
Anode
Bond Area
Cathode Bond Area
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890
5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635
5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773
5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957
4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206
5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671
4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668
5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174
4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
This voltage controlled Solidtron (VCS) discharge switch
utilizes an n-type MOS-Controlled Thyristor mounted on a
ThinPakTM, ceramic "chip-scale" hybrid.
The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
The ThinPak
TM
Package is a perforated, metalized ceramic
substrate attached to the silicon using 302
o
C solder. An epoxy
underfill is applied to protect the high voltage termination from
debris. All exterior metal surfaces are tinned with 63pb/37sn
solder providing the user with a circuit ready part. It's small
size and low profile make it extremely attractive to high dI/dt
applications where stray series inductance must be kept to a
minimum.
l
1400V Peak Off-State Voltage
l
32A Continuous Rating
l
4kA Surge Current Capability
l
>100kA/uSec dI/dt Capability
l
<100nSec Turn-On Delay
l
Low On-State Voltage
l
MOS Gated Control
l
Low Inductance Package
Anode (A)
Gate (G)
Cathode (K)
Gate Return (GR)
Advanced Pulse Power Device
N-MOS VCS, ThinPak
TM
SMCT TA32N14A10
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