參數(shù)資料
型號(hào)： SMCJ6.0-M3/57T
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 93K
代理商： SMCJ6.0-M3/57T
Document Number: 89331
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMCJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 25 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(+)SMCJ43
GFS
BFS
47.8
58.4
1.0
43
1.0
19.6
76.7
(+)SMCJ43A
GFT
BFT
47.8
52.8
1.0
43
1.0
21.6
69.4
(+)SMCJ45
GFU
50.0
61.1
1.0
45
1.0
18.7
80.3
(+)SMCJ45A
GFV
50.0
55.3
1.0
45
1.0
20.6
72.7
(+)SMCJ48
GFW
53.3
65.1
1.0
48
1.0
17.5
85.5
(+)SMCJ48A
GFX
53.3
58.9
1.0
48
1.0
19.4
77.4
(+)SMCJ51
GFY
56.7
69.3
1.0
51
1.0
16.5
91.1
(+)SMCJ51A
GFZ
56.7
62.7
1.0
51
1.0
18.2
82.4
(+)SMCJ54
GGD
60.0
73.3
1.0
54
1.0
15.6
96.3
(+)SMCJ54A
GGE
60.0
66.3
1.0
54
1.0
17.2
87.1
(+)SMCJ58
GGF
64.4
78.7
1.0
58
1.0
14.6
103
(+)SMCJ58A
GGG
64.4
71.2
1.0
58
1.0
16.0
93.6
(+)SMCJ60
GGH
66.7
81.5
1.0
60
1.0
14.0
107
(+)SMCJ60A
GGK
66.7
73.7
1.0
60
1.0
15.5
96.8
(+)SMCJ64
GGL
71.1
86.9
1.0
64
1.0
13.2
114
(+)SMCJ64A
GGM
71.1
78.6
1.0
64
1.0
14.6
103
(+)SMCJ70
GGN
77.8
95.1
1.0
70
1.0
12.0
125
(+)SMCJ70A
GGP
77.8
86.0
1.0
70
1.0
13.3
113
(+)SMCJ75
GGQ
83.3
102
1.0
75
1.0
11.2
134
(+)SMCJ75A
GGR
83.3
92.1
1.0
75
1.0
12.4
121
(+)SMCJ78
GGS
86.7
106
1.0
78
1.0
10.8
139
(+)SMCJ78A
GGT
86.7
95.8
1.0
78
1.0
11.9
126
(+)SMCJ85
GGU
94.4
115
1.0
85
1.0
9.9
151
(+)SMCJ85A
GGV
94.4
104
1.0
85
1.0
10.9
137
(+)SMCJ90
GGW
100
122
1.0
90
1.0
9.4
160
(+)SMCJ90A
GGX
100
111
1.0
90
1.0
10.3
146
(+)SMCJ100
GGY
111
136
1.0
100
1.0
8.4
179
(+)SMCJ100A
GGZ
111
123
1.0
100
1.0
9.3
162
(+)SMCJ110
GHD
122
149
1.0
110
1.0
7.7
196
(+)SMCJ110A
GHE
122
135
1.0
110
1.0
8.5
177
(+)SMCJ120
GHF
133
163
1.0
120
1.0
7.0
214
(+)SMCJ120A
GHG
133
147
1.0
120
1.0
7.8
193
(+)SMCJ130
GHH
144
176
1.0
130
1.0
6.5
231
(+)SMCJ130A
GHK
144
159
1.0
130
1.0
7.2
209
(+)SMCJ150
GHL
167
204
1.0
150
1.0
5.6
268
(+)SMCJ150A
GHM
167
185
1.0
150
1.0
6.2
243
(+)SMCJ160
GHN
178
218
1.0
160
1.0
5.2
287
(+)SMCJ160A
GHP
178
197
1.0
160
1.0
5.8
259
(+)SMCJ170
GHQ
189
231
1.0
170
1.0
4.9
304
(+)SMCJ170A
GHR
189
209
1.0
170
1.0
5.5
275
SMCJ188
GHT
209
255
1.0
188
1.0
4.4
344
SMCJ188A
GHS
209
231
1.0
188
1.0
4.6
328
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI
BI
MIN.
MAX.
相關(guān)PDF資料
PDF描述
SMCJ70A-M3/57T 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ8.0CA-M3/57T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ100A-M3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ14-M3/57T 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ16C-M3/9AT 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
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參數(shù)描述
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SMCJ64/9AT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 64V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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