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參數(shù)資料
| 型號： | SMCJ5.0A-TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSIL Diode(TRANSIL二極管) |
| 中文描述： | TRANSIL二極管（TRANSIL二極管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 62K |
| 代理商： | SMCJ5.0A-TR |
SMCJ5.0A-TR,CA-TR
SMCJ188A-TR,CA-TR
TRANSIL
TM
PEAK PULSEPOWER : 1500W (10/1000
μ
s)
STAND OFFVOLTAGERANGE :
From5V to 188V.
UNI ANDBIDIRECTIONALTYPES
LOW CLAMPINGFACTOR
FASTRESPONSETIME
FEATURES
SMC
(JEDECDO-214AB)
Symbol
P
PP
P
Parameter
Value
1500
Unit
W
Peak pulsepower dissipation(seenote 1)
Tj initial= T
amb
T
amb = 50
°
C
tp = 10ms
Tj initial= T
amb
Powerdissipationon infiniteheatsink
6.5
W
I
FSM
Non repetitivesurge peakforward
current forunidirectionaltypes
200
A
T
stg
T
j
Storagetemperaturerange
Maximumjunction temperature
- 65 to +175
150
°
C
°
C
°
C
T
L
Maximumlead temperaturefor solderingduring10 s.
260
Note 1
: Fora surge greater than the maximum values,the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25
°
C)
DESCRIPTION
TheSMCJ seriesareTRANSIL
TM
diodesdesigned
specifically for protecting sensitive equipment
againsttransientovervoltages.
Transildiodes provide high overvoltageprotection
by clamping action. Their instantaneousresponse
to transientovervoltagesmakesthem particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
November 1998 - Ed: 4A
Symbol
Parameter
Value
Unit
°
C/W
°
C/W
R
th (j-l)
Junctionto leads
15
R
th (j-a)
Junctionto ambienton printedcircuit on recommendedpad
layout
75
THERMALRESISTANCES
1/5
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