- 您現在的位置：買賣IC網 > PDF目錄32356 > SMCJ28CTR (MICROSEMI CORP-SCOTTSDALE) 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB PDF資料下載
參數資料
| 型號： | SMCJ28CTR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 198K |
| 代理商： | SMCJ28CTR |
SURFACE MOUNT 1500 Watt
Transient Voltage Suppressor
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCJ5.0 thru SMCJ170CA, e3
and SMCG5.0 thru SMCG170CA, e3
SMC
5.0–170CA,
e3
GRAPHS
Copyright
2009
SA3-43, REV F, 5-24-09
FIGURE 2
– PULSE WAVEFORM
100
10
1.0
0
(Waveform – See Figure 2)
Non-repetitive
(P
PP
)–
Peak
Pul
se
Power
-
kW
Test wave form
parameterxs
tr = 10
μsec.
tp = 1000
μsec.
1
μs
10
μsec
100
μsec
1ms
10ms
tp – Pulse Time – sec
FIGURE 1 –
Peak Pulse Power vs. Pulse Time
PAD LAYOUT
INCHES
mm
A
.390
9.90
B
.110
2.79
C
.150
3.81
INCHES
mm
A
0.510
12.95
B
0.110
2.79
C
0.150
3.81
TL Lead Temperature
oC
FIGURE 4
FIGURE 3 – Derating Curve
T
ypical Capacitance vs.
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMCJ
SMCG
Breakdown Voltage
PACKAGE DIMENSIONS
DO-214AB
DO-215AB
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115 .260 .220 .305 .077 .380
.025
.030
MAX
.121 .280 .245 .320 .104 .400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92 6.60 5.59 7.75 1.95 9.65
0.635 .760
MAX
3.07 7.11 6.22 8.13 2.65 10.16 1.016 1.520
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
相關PDF資料 |
PDF描述 |
|---|---|
| SMCJ36CTR | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ54CATR | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCG11E3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG85AE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCJ18AE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMCJ28-E3/1T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 28V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ28-E3/51T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ28-E3/57T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ28-E3/59T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ28-E3/9AT | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。