參數(shù)資料
型號(hào)： SMCJ160-51-E3
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝： PLASTIC, SMC, 2 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 45K
代理商： SMCJ160-51-E3
SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88394
2
1-May-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 3.5V at IF = 100A (uni-directional only)
Device
Breakdown Voltage
Maximum
Device Type
Marking
V(BR) at IT(1)
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Modified
Code
(V)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
“J” Bend Lead
UNI
BI
Min
Max
IT (mA)
VWM (V)
ID (
A) (3)
(A)(2)
VC (V)
+SMCJ5.0
GDD
6.40
7.82
10.0
5.0
1000
156.3
9.6
+SMCJ5.0A(5)
GDE
6.40
7.07
10.0
5.0
1000
163.0
9.2
+SMCJ6.0
GDF
6.67
8.15
10.0
6.0
1000
131.6
11.4
+SMCJ6.0A
GDG
6.67
7.37
10.0
6.0
1000
145.6
10.3
+SMCJ6.5
GDH
BDH
7.22
8.82
10.0
6.5
500
122.0
12.3
+SMCJ6.5A
GDK
BDK
7.22
7.98
10.0
6.5
500
133.9
11.2
+SMCJ7.0
GDL
7.78
9.51
10.0
7.0
200
112.8
13.3
+SMCJ7.0A
GDM
7.78
8.60
10.0
7.0
200
125.0
12.0
+SMCJ7.5
GDN
BDN
8.33
10.2
1.0
7.5
100
104.9
14.3
+SMCJ7.5A
GDP
BDP
8.33
9.21
1.0
7.5
100
116.3
12.9
+SMCJ8.0
GDQ
BDG
8.89
10.9
1.0
8.0
50
100.0
15.0
+SMCJ8.0A
GDR
BDR
8.89
9.83
1.0
8.0
50
110.3
13.6
+SMCJ8.5
GDS
BDS
9.44
11.5
1.0
8.5
20
94.3
15.9
+SMCJ8.5A
GDT
BDT
9.44
10.4
1.0
8.5
20
104.2
14.4
+SMCJ9.0
GDU
BDU
10.0
12.2
1.0
9.0
10
88.8
16.9
+SMCJ9.0A
GDV
BDV
10.0
11.1
1.0
9.0
10
97.4
15.4
+SMCJ10
GDW
BDW
11.1
13.6
1.0
10
5.0
79.8
18.8
+SMCJ10A
GDX
BDX
11.1
12.3
1.0
10
5.0
88.2
17.0
+SMCJ11
GDY
12.2
14.9
1.0
11
5.0
74.6
20.1
+SMCJ11A
GDZ
12.2
13.5
1.0
11
5.0
82.4
18.2
+SMCJ12
GED
BED
13.3
16.3
1.0
12
5.0
68.2
22.0
+SMCJ12A
GEE
BEE
13.3
14.7
1.0
12
5.0
75.4
19.9
+SMCJ13
GEF
14.4
17.6
1.0
13
1.0
63.0
23.8
+SMCJ13A
GEG
14.4
15.9
1.0
13
1.0
69.8
21.5
+SMCJ14
GEH
BEH
15.6
19.1
1.0
14
1.0
58.1
25.8
+SMCJ14A
GEK
BEK
15.6
17.2
1.0
14
1.0
64.7
23.2
+SMCJ15
GEL
BEL
16.7
20.4
1.0
15
1.0
55.8
26.9
+SMCJ15A
GEM
BEM
16.7
18.5
1.0
15
1.0
61.5
24.4
+SMCJ16
GEN
17.8
21.8
1.0
16
1.0
52.1
28.8
+SMCJ16A
GEP
17.8
19.7
1.0
16
1.0
57.7
26.0
+SMCJ17
GEQ
18.9
23.1
1.0
17
1.0
49.2
30.5
+SMCJ17A
GER
18.9
20.9
1.0
17
1.0
54.3
27.6
+SMCJ18
GES
BES
20.0
24.4
1.0
18
1.0
46.6
32.2
+SMCJ18A
GET
BET
20.0
22.1
1.0
18
1.0
51.4
29.2
+SMCJ20
GEU
BEU
22.2
27.1
1.0
20
1.0
41.9
35.8
+SMCJ20A
GEV
BEV
22.2
24.5
1.0
20
1.0
46.3
32.4
+SMCJ22
GEW
BEW
24.4
29.8
1.0
22
1.0
38.1
39.4
+SMCJ22A
GEX
BEX
24.4
26.9
1.0
22
1.0
42.3
35.5
+SMCJ24
GEY
BEY
26.7
32.6
1.0
24
1.0
34.9
43.0
+SMCJ24A
GEZ
BEZ
26.7
29.5
1.0
24
1.0
38.6
38.9
+SMCJ26
GFD
BFD
28.9
35.3
1.0
26
1.0
32.2
46.6
+SMCJ26A
GFE
BFE
28.9
31.9
1.0
26
1.0
35.6
42.1
+SMCJ28
GFF
BFF
31.1
38.0
1.0
28
1.0
30.0
50.0
+SMCJ28A
GFG
BFG
31.1
34.4
1.0
28
1.0
33.0
45.4
+SMCJ30
GFH
BFH
33.3
40.7
1.0
30
1.0
28.0
53.5
+SMCJ30A
GFK
BFK
33.3
36.8
1.0
30
1.0
31.0
48.4
Notes: (1) Pulse test: tp
≤ 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMCG/SMCJ5.0CA, the maximum V(BR) is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
相關(guān)PDF資料
PDF描述
SMCJ188-9A-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ18-9A-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ20-57-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ26-9A-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ28-9A-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMCJ160A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 160volts 5uA 5.8 Amps Uni-Dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ160A/1T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 160V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ160A/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 160V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ160A/59T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 160V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ160A/9AT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 160V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*