<code id="bw8if"></code><code id="bw8if"><tr id="bw8if"></tr></code>
<button id="bw8if"></button>
<li id="bw8if"><pre id="bw8if"></pre></li>
  • <tt id="bw8if"><dl id="bw8if"></dl></tt>
    <code id="bw8if"></code>
    <code id="bw8if"><tr id="bw8if"></tr></code>
  • 參數(shù)資料
    型號: SMCJ16/9AT-E3
    廠商: VISHAY SEMICONDUCTORS
    元件分類: TVS二極管 - 瞬態(tài)電壓抑制
    英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
    封裝: PLASTIC, SMC, 2 PIN
    文件頁數(shù): 4/4頁
    文件大?。?/td> 42K
    代理商: SMCJ16/9AT-E3
    SMCJ5.0 thru 188CA
    Vishay Semiconductors
    formerly General Semiconductor
    www.vishay.com
    Document Number 88394
    4
    26-Sep-02
    Ratings and
    Characteristic Curves (TA = 25°C unless otherwise noted)
    C
    J
    Junction
    Capacitance
    (pF)
    Fig. 4 – Typical Junction Capacitance
    Uni-Directional
    0
    25
    50
    75
    100
    0
    75
    25
    50
    100
    125
    150
    175
    200
    Peak
    Pulse
    Power
    (P
    PP
    )or
    Current
    (I
    PP
    )
    Derating
    in
    Percentage,
    %
    TA — Ambient Temperature (
    °C)
    10
    100
    1,000
    10,000
    20,000
    10
    1
    100
    400
    VWM — Reverse Stand-Off Voltage (V)
    Fig. 2 – Pulse Derating Curve
    P
    PPM
    Peak
    Pulse
    Power
    (kW)
    Fig. 1 – Peak Pulse Power Rating Curve
    0.1
    1
    10
    100
    0.1
    s
    1.0
    s10s
    td — Pulse Width (sec.)
    100
    s
    1.0ms
    10ms
    0.31 x 0.31" (8.0 x 8.0mm)
    Copper Pad Areas
    TJ = 25
    °C
    f = 1.0MHz
    Vsig = 50mVp-p
    Measured at
    Zero Bias
    VR, Measured at
    Stand-Off
    Voltage, VWM
    Fig. 6 - Maximum Non-Repetitive Forward
    Surge Current Uni-Directional Use Only
    1
    10
    100
    10
    100
    200
    Peak
    Forward
    Surge
    Current,
    Amperes
    Number of Cycles at 60Hz
    8.3ms Single Half Sine-Wave
    (JEDEC Method)
    TJ = TJ max.
    Uni-Directional
    Bi-Directional
    tp — Pulse Duration (sec)
    T
    ransient
    Thermal
    Impedance
    (
    °C/W)
    Fig. 5 – Typical Transient Thermal
    Impedance
    0.1
    1.0
    10
    100
    0.001
    0.01
    0.1
    1
    10
    100
    1000
    0
    50
    100
    150
    I PPM
    Peak
    Pulse
    Current,
    %
    I
    RSM
    Fig. 3 – Pulse Waveform
    TJ = 25
    °C
    Pulse Width (td)
    is defined as the point
    where the peak current
    decays to 50% of IPPM
    tr = 10
    sec.
    Peak Value
    IPPM
    Half Value — IPP
    IPPM
    2
    td
    10/1000
    sec. Waveform
    as defined by R.E.A.
    0
    1.0
    2.0
    3.0
    4.0
    t — Time (ms)
    相關(guān)PDF資料
    PDF描述
    SMCJ160/57T-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
    SMCJ160/9AT-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
    SMCJ160C/57T-E3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
    SMCJ16C/9AT-E3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
    SMCJ170A/9AT-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    SMCJ16A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 16volts 5uA 57.7 Amps Uni-Dir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
    SMCJ16A R6 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 16V 1.5KW 2-Pin SMC T/R
    SMCJ16A 制造商:Fairchild Semiconductor Corporation 功能描述:TVS Diode
    SMCJ16A/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 16V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
    SMCJ16A/59T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 16V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C