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    參數(shù)資料
    型號: SMCGLCE26E3TR
    廠商: MICROSEMI CORP-SCOTTSDALE
    元件分類: TVS二極管 - 瞬態(tài)電壓抑制
    英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
    文件頁數(shù): 1/4頁
    文件大?。?/td> 222K
    代理商: SMCGLCE26E3TR
    1500 WATT LOW CAPACITANCE
    SURFACE MOUNT TRANSIENT
    VOLTAGE SUPPRESSOR
    WWW
    .Microse
    m
    i
    .CO
    M
    S C O T TS DALE DIVISION
    SMCGLCE6.5 thru SMCGLCE170A, e3
    SMCJLCE6.5 thru SMCJLCE170A, e3
    SMCGLCE/SMCJLCE,
    e3
    DESCRIPTION
    APPEARANCE
    This surface mount Transient Voltage Suppressor (TVS) product family includes a
    rectifier diode element in series and opposite direction to achieve low capacitance
    below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low
    TVS capacitance may be used for protecting higher frequency applications in inductive
    switching environments or electrical systems involving secondary lightning effects per
    IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. They
    also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
    If bipolar
    transient capability is required, two of these low capacitance TVS devices may be used
    in parallel and opposite directions (anti-parallel) for complete ac protection (Figure 6).
    IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
    FEATURES
    APPLICATIONS / BENEFITS
    Available in standoff voltage range of 6.5 to 200 V
    Low capacitance of 100 pF or less
    Molding compound flammability rating: UL94V-O
    Two different terminations available in C-bend (modified J-
    Bend with DO-214AB) or Gull-wing (DO-215AB)
    Options for screening in accordance with MIL-PRF-19500
    for JAN, JANTX, and JANTXV are available by adding MQ,
    MX, or MV prefixes respectively to part numbers
    Optional 100% screening for avionics grade is available by
    adding MA prefix to part number for 100% temperature
    cycle –55C to 125C (10X) as well as surge (3X) and 24
    hours HTRB with post test VBR & IR
    RoHS Compliant devices available by adding an “e3” suffix
    1500 Watts of Peak Pulse Power at 10/1000 μs
    Low capacitance for data line protection to 1 MHz
    Protection for aircraft fast data rate lines up to
    Level 5 Waveform 4 and Level 2 Waveform 5A in
    RTCA/DO-160D (also see MicroNote 130) &
    ARINC 429 with bit rates of 100 kb/s (per ARINC
    429, Part 1, par 2.4.1.1)
    IEC61000-4-2 ESD 15 kV (air), 8 kV (contact)
    IEC61000-4-5 (Lightning) as further detailed in
    LCE6.5 thru LCE170A data sheet
    T1/E1 Line Cards
    Base Stations, WAN & XDSL Interfaces
    CSU/DSU Equipment
    MAXIMUM RATINGS
    MECHANICAL AND PACKAGING
    1500 Watts of Peak Pulse Power dissipation at 25oC with
    repetition rate of 0.01% or less*
    Clamping Factor: 1.4 @ Full Rated power
    1.30 @ 50% Rated power
    t
    clamping (0 volts to V(BR) min): Less than 5x10
    -9 seconds
    Operating and Storage temperatures: -65 to +150oC
    Steady State power dissipation: 5.0W @ T
    L = 50
    oC
    THERMAL RESISTANCE: 20
    oC/W (typical junction to
    lead (tab) at mounting plane
    * When pulse testing, do not pulse in opposite direction
    (see “Schematic Applications” section herein and
    Figures 5 & 6 for further protection in both directions)
    CASE: Molded, surface mountable
    TERMINALS: Gull-wing or C-bend (modified J-
    bend) tin-lead or RoHS compliant annealed
    matte-tin plating solderable per MIL-STD-750,
    method 2026
    POLARITY: Cathode indicated by band
    MARKING: Part number with abbreviated prefix
    (CLC6.5A, CLC6.5Ae3, CLC33, CLC33e3, etc.)
    TAPE & REEL option: Standard per EIA-481-B
    with 16 mm tape, 750 per 7 inch reel or 2500 per
    13 inch reel (add “TR” suffix to part number)
    ELECTRICAL CHARACTERISTICS @ 25oC
    Breakdown Voltage
    VBR
    @ I(BR)
    Volts
    MICROSEMI
    Part Number
    Gull-Wing
    “G”
    Bend Lead
    MICROSEMI
    Part Number
    Modified
    “J”
    Bend Lead
    Reverse
    Stand-Off
    Voltage
    VWM
    Volts
    MIN
    MAX
    mA
    Maximum
    Reverse
    Leakage
    @VWM
    ID
    μA
    Maximum
    Clamping
    Voltage
    @IPP
    VC
    Volts
    Maximum
    Peak Pulse
    Current
    IPP
    @10/1000
    Amps
    Maximum
    Capacitance
    @ 0 Volts,
    f = 1 MHz
    pF
    VWIB
    Working
    Inverse
    Blocking
    Voltage
    Volts
    IIB
    Inverse
    Blocking
    Leakage
    Current
    μA
    VPIB
    Peak
    Inverse
    Blocking
    Voltage
    Volts
    SMCGLCE6.5
    SMCGLCE6.5A
    SMCGLCE7.0
    SMCGLCE7.0A
    SMCJLCE6.5
    SMCJLCE6.5A
    SMCJLCE7.0
    SMCJLCE7.0A
    6.5
    7.0
    7.22
    7.78
    8.82
    7.98
    9.51
    8.60
    10
    1000
    500
    12.3
    11.2
    13.3
    12.0
    100
    75
    10
    100
    SMCGLCE7.5
    SMCGLCE7.5A
    SMCGLCE8.0
    SMCGLCE8.0A
    SMCJLCE7.5
    SMCJLCE7.5A
    SMCJLCE8.0
    SMCJLCE8.0A
    7.5
    8.0
    8.33
    8.89
    10.2
    9.21
    10.9
    9.83
    10
    1
    250
    100
    14.3
    12.9
    15.0
    13.6
    100
    75
    10
    100
    SMCGLCE8.5
    SMCGLCE8.5A
    SMCGLCE9.0
    SMCGLCE9.0A
    SMCJLCE8.5
    SMCJLCE8.5A
    SMCJLCE9.0
    SMCJLCE9.0A
    8.5
    9.0
    9.44
    10.0
    11.5
    10.4
    12.2
    11.1
    1
    50
    10
    15.9
    14.4
    16.9
    15.4
    94
    100
    89
    97
    100
    75
    10
    100
    Microsemi
    Scottsdale Division
    Page 1
    Copyright
    2009
    2-11-2009 REV J
    8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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