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參數(shù)資料
| 型號： | SMCG5630A/TR13 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 426K |
| 代理商： | SMCG5630A/TR13 |
Transient Voltage Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2003
01-24-2003 REV A
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCG5629 thru SMCG5665A
and SMCJ5629 thru SMCJ5665A
OUTLINE AND CIRCUIT
Pulse Time (tp)
FIGURE 1 Non-repetitive peak pulse power rating curve.
Note: Peak power defined as peak voltage times peak current.
BV: Breakdown Voltage in Volts
FIGURE 5 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
FIGURE 2
Pulse wave form for exponential surge
FIGURE 3 Derating curve
PACKAGE DIMENSIONS
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115
.260
.220
.305
.075
.380
.025
.30
MAX
.121
.280
.245
.320
.095
.400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92
6.60
5.59
7.75
1.90
9.65
0.635
0.760
MAX
3.07
7.11
6.22
8.13
2.41
10.16
1.016
1.520
DO-214AB
DO-215AB
SMCG/J
5629
thru
SMCG/J
5665
A
Measured at
zero voltage
Measured at
Stand-off Voltage
C:
Ca
pacita
nc
ein
pi
co
farads
Exponential wave-
form (See FIG. 2)
Square-wave pulse
P
u
lse
cu
rren
t(I
P
)in
p
erce
n
tof
I
PP
Time (t) in milliseconds
Peak
pul
se
pow
er
(P
PP
)or
cur
rent
I
PP
(
sur
ge)
in
per
ce
nt
o
f2
5
o C
ra
ting
TA Ambient Temperature
oC
Stea
dy-
stat
e
p
o
w
e
r
dissipatio
n
(
w
atts)
TL – Lead Temperature
oC
FIGURE 4
Steady-state power
derating curve
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of I
(surge).
Peak
Pulse
Power
(P
PP
)in
KW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMCJ5632AE3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCG5638E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5637/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5635E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5635AE3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMCG5630E3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 6.75V, VBRMAX = 8.25V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 6.05VWM 11.7VC DO215AB |
| SMCG5631 | 制造商:Microsemi Corporation 功能描述:TVS SGL 6.63V 1.5KW 2PIN DO-215AB - Bulk |
| SMCG5631/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 7.38V, VBRMAX = 9.02V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 6.63VWM 12.5VC DO215AB |
| SMCG5631A | 制造商:Microsemi Corporation 功能描述:TVS SGL 7.02V 1.5KW 2PIN DO-215AB - Bulk |
| SMCG5631A/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 7.79V, VBRMAX = 8.61V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 7.02VWM 12.1VC DO215AB |
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