參數(shù)資料
型號： SMCG36C-HE3/9AT
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
封裝： ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 99K
代理商： SMCG36C-HE3/9AT
www.vishay.com
4
Document Number 88457
08-Sep-06
Vishay General Semiconductor
SMCG5.0 thru SMCG188CA
Note:
(1) Measured on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
75
°C/W
Typical thermal resistance, junction to lead
RθJL
15
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMCG5.0A-E3/57T
0.211
57T
850
7" Diameter Plastic Tape & Reel
SMCG5.0A-E3/9AT
0.211
9AT
3500
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.31 x 0.31" (0.8 x 0.8 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
P
PPM
-
P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance Uni-Directional
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
10000
20000
10
1
100
400
Uni-Directional
Bi-Directional
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-off
Voltage VWM
相關(guān)PDF資料
PDF描述
SMCG36CA-HE3/9AT 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG40A-HE3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG43A-HE3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG43C-HE3/57T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG5.0A-HE3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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SMCG36-E3/51T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG36-E3/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG36-E3/59T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG36-E3/9AT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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