1. <thead id="qck2a"></thead>
    <ul id="qck2a"><thead id="qck2a"><s id="qck2a"></s></thead></ul>
    參數(shù)資料
    型號(hào): SMCG11C-HE3/57T
    廠商: VISHAY SEMICONDUCTORS
    元件分類: TVS二極管 - 瞬態(tài)電壓抑制
    英文描述: 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    封裝: ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
    文件頁(yè)數(shù): 4/6頁(yè)
    文件大小: 99K
    代理商: SMCG11C-HE3/57T
    www.vishay.com
    4
    Document Number 88457
    08-Sep-06
    Vishay General Semiconductor
    SMCG5.0 thru SMCG188CA
    Note:
    (1) Measured on minimum recommended pad layout
    RATINGS AND CHARACTERISTICS CURVES
    (TA = 25 °C unless otherwise noted)
    THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
    PARAMETER
    SYMBOL
    VALUE
    UNIT
    Typical thermal resistance, junction to ambient (1)
    RθJA
    75
    °C/W
    Typical thermal resistance, junction to lead
    RθJL
    15
    °C/W
    ORDERING INFORMATION
    PREFERRED P/N
    UNIT WEIGHT (g)
    PREFERRED PACKAGE CODE
    BASE QUANTITY
    DELIVERY MODE
    SMCG5.0A-E3/57T
    0.211
    57T
    850
    7" Diameter Plastic Tape & Reel
    SMCG5.0A-E3/9AT
    0.211
    9AT
    3500
    13" Diameter Plastic Tape & Reel
    Figure 1. Peak Pulse Power Rating Curve
    Figure 2. Pulse Power or Current vs. Initial Junction Temperature
    0.1
    1
    10
    100
    0.31 x 0.31" (0.8 x 0.8 mm)
    Copper Pad Areas
    0.1 s
    1.0 s
    10 s
    100 s
    1.0 ms
    10 ms
    P
    PPM
    -
    P
    e
    ak
    P
    u
    lse
    P
    o
    w
    er
    (k
    W
    )
    td - Pulse Width (s)
    0
    255075
    100
    75
    50
    25
    0
    125
    150
    175
    200
    TJ - Initial Temperature (°C)
    Pe
    a
    k
    P
    u
    lse
    P
    o
    w
    er
    (P
    PP
    )or
    C
    u
    rrent
    (I
    PP
    )
    Der
    ating
    in
    P
    e
    rcentage
    ,%
    Figure 3. Pulse Waveform
    Figure 4. Typical Junction Capacitance Uni-Directional
    0
    50
    100
    150
    td
    0
    1.0
    2.0
    3.0
    4.0
    IPPM
    -
    P
    e
    ak
    P
    u
    lse
    C
    u
    rrent,
    %
    I
    RSM
    t - Time (ms)
    tr = 10 sec
    Peak Value
    IPPM
    Half Value -
    IPPM
    IPP
    2
    10/1000 sec Waveform
    as defined by R.E.A.
    Tj = 25 °C
    Pulse Width (td)
    is defined as the point
    where the peak current
    decays to 50 % of IPPM
    10
    100
    1000
    10000
    20000
    10
    1
    100
    400
    Uni-Directional
    Bi-Directional
    C
    J-
    J
    u
    nction
    Capacitance
    (pF)
    VWM - Reverse Stand-off Voltage (V)
    Tj = 25 °C
    f = 1.0 MHz
    Vsig = 50 mVp-p
    Measured at
    Zero Bias
    VR, Measured at
    Stand-off
    Voltage VWM
    相關(guān)PDF資料
    PDF描述
    SMCG11CA-HE3/57T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG12-HE3/57T 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG120-HE3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG12CA-HE3/9AT 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG13-HE3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    SMCG12 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT
    SMCG120 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT
    SMCG120A 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT
    SMCG120A-E3/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 120V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
    SMCG120A-E3/59T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 120V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C