參數(shù)資料
型號(hào)： SMBJ8.0CT3
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 41K
代理商： SMBJ8.0CT3
All products are sold to the commercial specifications shown for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
12
Figure 1 - Capacitance
1
10
100
1000
10000
10
100
1000
Device Stand-off Voltage - Volts
@ Stand-off Voltage
Pico-
farads
Figure 2 - Pad Size
2.16
2.26
2.74
2.16
SMB
Solder Pads
(all dimensions in mm)
Voltage
5% Voltage Tolerance
Packing Option
T1 = Taped (500 pcs)
T3 = Taped (3000 pcs)
Bi Directional
SMBJ
A
C
ORDERING INFORMATION
2.0
5.21/5.59
0.102
0.203
Seating
Plane
4.06/4.57
3.30 -
3.94
2.18/
2.44
SMBJ5.0 - SMBJ188CA
SMBJ5.0 - SMBJ188CA series
0.76/
1.27
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
Protect sensitive electronics against voltage transients induced by electro-static
discharge (ESD), inductive load switching, and lightning. Ideal for the
protection of I/O interfaces, Vcc bus and other integrated circuits.
FEATURES
Stand-off Voltage Range 5.0 to 188 Volts
Uni-directional and Bi-directional
Glass Passivated Junction
Jedec package designed to meet SM assembly needs
Low lead inductance
Each device 100% surge tested
UL Recognized
MAXIMUM RATINGS
Peak Pulse Power (Ppk) 600 Watts (10 X 1000s)
(see diagram on page 6 for wave form)
1.5 Watt Steady State
Response time: 1 X 10-12 secs (theoretical)
Forward surge rating: 100A, 8.3 ms single half sine-wave
(Uni-directional only)
Operating & storage Temp.: -55°C to +150°C
MECHANICAL DATA
CASE: D0214AA moulded plastic over glass
pasivated junction UL94V(O) (Thermoset) Epoxy.
Terminals: Solder plated solderable per MIL-STD-750
Method 2026
Solderable leads: 230°C for 10 seconds.
Marking: cathode band(positive terminal, uni-directional
devices only), device code, logo
Weight: 0.093 gram (approx.)
Figure 3 - Peak Pulse Power vs. Pulse Time
1
s
100w
500w
5kw
20kw
2kw
100kw
10
s
10 ms
100
s1ms
Pulse Time (tp)
p
相關(guān)PDF資料
PDF描述
SMBJ8.5AT3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ8.5CT3 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ85AT3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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參數(shù)描述
SMBJ85 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 85Vr 600W 4.4A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ85/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ85/2 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ85/52 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ85/55 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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