參數(shù)資料
型號： SMBJ43C
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： PLASTIC, SMB, 2 PIN
文件頁數(shù)： 4/5頁
文件大小： 111K
代理商： SMBJ43C
SMBJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1s
1.0s10s
td — Pulse Width (sec.)
100s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I FSM
—
Peak
Forward
Surge
Current
(A)
tp — Pulse Duration (sec)
T
ransient
Thermal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
C
J—
Junction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
VWM — Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
www.vishay.com
Document Number 88392
4
19-Apr-04
相關PDF資料
PDF描述
SMBJ100-52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ11CA-5B 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ15A-52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ188C-5B 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ48A-51 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相關代理商/技術參數(shù)
參數(shù)描述
SMBJ43C/2 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 43V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ43C/5 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 43V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ43C/52 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 43V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ43C/55 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 43V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ43C/5B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 43V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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