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參數(shù)資料
| 型號： | SMBJ30A-TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Speed CMOS Logic Quad 2-Input NAND Gates 14-CDIP -55 to 125 |
| 中文描述： | TRANSILTM |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | SMBJ30A-TR |
DS19002 Rev. 11 - 2
1 of 3
SMBJ5.0(C)A - SMBJ170(C)A
SMBJ5.0(C)A - SMBJ170(C)A
600W SURFACE MOUNT TRANSIENT VOLTAGE
SUPPRESSOR
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Pulse Power Dissipation
(Non repetitive current pulse derated above T
A
= 25 C)
(Note 1)
P
PK
600
W
Peak Forward Surge Current, 8.3ms Single Half Sine
Wave Superimposed on Rated Load (JEDEC Method)
(Notes 1, 2, & 3)
I
FSM
100
A
Instantaneous Forward Voltage @I
PP
= 35A V
BR
<100V
(Notes 1, 2, & 3) V
BR
100V
V
F
3.5
5.0
V
V
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Case: SMB, Transfer Molded Epoxy
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity Indicator: Cathode Band
(Note: Bi-directional devices have no polarity
indicator.)
Marking: Date Code and Marking Code
See Page 3
Weight: 0.1 grams (approx.)
Ordering Info: See Page 3
600W Peak Pulse Power Dissipation
5.0V - 170V Standoff Voltages
Glass Passivated Die Construction
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
Fast Response Time
Plastic Material - UL Flammability
Classification Rating 94V-0
Mechanical Data
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.70
C
1.91
2.21
D
0.15
0.31
E
5.00
5.59
G
0.10
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
3. Unidirectional units only.
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| SMBJ30C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 30Vr 600W 12.4A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ30C/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 30V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ30C/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 30V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ30C/2B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 30V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ30C/5 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 30V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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