- 您現在的位置：買賣IC網 > PDF目錄45124 > SMBJ26CE3TR (MICROSEMI CORP-SCOTTSDALE) 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF資料下載
參數資料
| 型號： | SMBJ26CE3TR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 182K |
| 代理商： | SMBJ26CE3TR |
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMBJ5.0 thru SMBJ170A, CA, e3
and SMBG5.0 thru SMBG170A, CA, e3
SMB5.0–
170AC,
e3
GRAPHS
50
30
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
P
PP
–
Peak
Pulse
Power
–
kW
TC = 25
oC
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
1000
10,000
Test waveform parameters: tr=10
μs, tw=1000 μs
tw – Pulse Width -
μs
FIGURE 2
FIGURE 1
Pulse Waveform for
Peak Pulse Power vs. Pulse Time
Exponential Surge
PAD LAYOUT
INCHES
mm
A
.260
6.60
B
.085
2.16
C
.110
2.79
INCHES
mm
A
0.320
8.13
B
0.085
2.16
C
0.110
2.79
C
–
Ca
pa
cita
nce
-
Pi
cofarads
Microsemi
Scottsdale Division
Page 4
Copyright
2007
6-20-2007 REV H
TL Lead Temperature
oC
V(BR) - Breakdown Voltage – Volts
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMBJ
SMBG
FIGURE 3 -
Derating Curve
FIGURE 4
Typical Capacitance vs Breakdown Voltage
PACKAGE DIMENSIONS
A
B
C
D
E
F
K
L
MIN
.077
.160
.130
.205
.077
.235
.015
.030
MAX
.083
.180
.155
.220
.104
.255
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
1.96
4.06
3.30
5.21
1.95
5.97
.381
.760
MAX
2.10
4.57
3.94
5.59
2.65
6.48
.762
1.520
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ28CAE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ33CAE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ48AE3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ51AE3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ7.5E3TR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ26CHE3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ26CHE3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ26CHE3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ26E3 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 26V 600W 2PIN DO-214AA - Bulk |
| SMBJ26-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 26V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。